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|Title:||Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost||Authors:||Koh, S.-M.
|Issue Date:||2010||Citation:||Koh, S.-M.,Zhang, P.,Ren, S.-F.,Ng, C.-M.,Samudra, G.S.,Yeo, Y.-C. (2010). Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost. 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 : 412-415. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2010.5618195||Abstract:||We report a study of carrier transport in strained n-channel MOSFETs (nFETs) with embedded silicon-carbon (Si:C) source/drain (S/D) stressors formed in close proximity to the channel, taking parasitic resistance into account in the extraction of carrier transport parameters. While bringing the Si:C S/D stressors closer to the channel improves their effectiveness in imparting tensile strain to the channel, a degradation in ballistic efficiency Bsat due to increased carrier scattering is observed. This is compensated, however, by an increase in the carrier injection velocity vinj, thereby resulting in an on-state current IOn enhancement of ∼7 % in nFETs with channel-proximate Si:C S/D over nFETs with conventional e-Si:C S/D. In addition, the impact of channel orientation on carrier transport characteristics for the new process integration scheme is also evaluated in this paper. ©2010 IEEE.||Source Title:||2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010||URI:||http://scholarbank.nus.edu.sg/handle/10635/69561||ISBN:||9781424466610||DOI:||10.1109/ESSDERC.2010.5618195|
|Appears in Collections:||Staff Publications|
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