Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement

Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2006.346815

Title:	Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement
Authors:	Liow, T.-Y. Tan, K.-M. Chin, H.-C. Lee, R.T.P. Tung, C.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
Issue Date:	2006
Citation:	Liow, T.-Y.,Tan, K.-M.,Chin, H.-C.,Lee, R.T.P.,Tung, C.-H.,Samudra, G.S.,Balasubramanian, N.,Yeo, Y.-C. (2006). Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346815
Abstract:	We report performance optimization techniques for FinFETs with Si 0.99C0.01 source and drain (S/D) regions and sub-30 nm gate lengths. By scaling up the Si0.99C0.01 stressor thickness, a ∼9% IDSat enhancement can be obtained. A further 16% IDSat enhancement can be achieved with the adoption of slim spacers. Carrier backscattering study was performed to clarify the carrier transport characteristics such as ballistic efficiency and carrier source injection, showing consistency with observed IDSat enhancement.
Source Title:	Technical Digest - International Electron Devices Meeting, IEDM
URI:	http://scholarbank.nus.edu.sg/handle/10635/83529
ISBN:	1424404398
ISSN:	01631918
DOI:	10.1109/IEDM.2006.346815
Appears in Collections:	Staff Publications

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