Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2010.2065809
Title: Device physics and characteristics of graphene nanoribbon tunneling FETs
Authors: Chin, S.-K.
Seah, D.
Lam, K.-T.
Samudra, G.S. 
Liang, G. 
Keywords: Dirac equation
graphene nanoribbons (GNR)
nonequilibrium Green's function (NEGF)
tunneling FET
Issue Date: Nov-2010
Citation: Chin, S.-K., Seah, D., Lam, K.-T., Samudra, G.S., Liang, G. (2010-11). Device physics and characteristics of graphene nanoribbon tunneling FETs. IEEE Transactions on Electron Devices 57 (11) : 3144-3152. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2065809
Abstract: We present a detailed simulation study on the currentvoltage characteristics of ballistic graphene nanoribbon (GNR) tunneling FETs of different widths with varying temperatures and channel length. Our model uses the self-consistent nonequilibrium Green's function and the quasi-2-D Poisson solver with the material details of the GNRs modeled by the uncoupled mode space Dirac equation. We find that, in general, the GNR tunneling FETs from the 3p + 1 family have better ION/IOFF characteristics than those from the 3p family due to smaller effective masses of the former. A lower drain doping concentration relative to that of the source enhances the I ON/IOFF. Most significantly, we find that a higher doping concentration at the source enhances ION but degrades the subthreshold swing (SS). As a function of temperature, the SS shows highly nonlinear behaviors. In terms of intrinsic delay and power-delay product, the GNR tunneling FETs show very promising scaling behaviors and can be optimized to meet the International Technology Roadmap for Semiconductors roadmap requirements through adjustment in doping concentrations and other parameters. © 2010 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82148
ISSN: 00189383
DOI: 10.1109/TED.2010.2065809
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