Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
 
 
Email
eleshanr@nus.edu.sg
 

Refined By:
Date Issued:  [2000 TO 2009]
Department:  ELECTRICAL & COMPUTER ENGINEERING
Type:  Conference Paper

Results 41-60 of 89 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
412005Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retentionChin, A. ; Laio, C.C.; Chen, C.; Chiang, K.C.; Yu, D.S.; Yoo, W.J. ; Samudra, G.S. ; Wang, T.; Hsieh, I.J.; McAlister, S.P.; Chi, C.C.
422007Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressorsLee, R.T.P. ; Yang, L.-T.; Ang, K.-W.; Liow, T.-Y.; Tan, K.-M.; Wong, A.S.-W.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
432009Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channelsMa, F.-J. ; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Budhaaraju, K.D.; Lo, G.Q.; Kwong, D.L.
442006Modeling study of InSb thin film for advanced III-V MOSFET applicationsZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
452005Modelling, analysis and design of cascaded forward and interleaved converter for powering future microprocessorsSingh, R.P.; Khambadkone, A.M. ; Samudra, G.S. ; Liang, Y.C. 
462001MOS-controlled smart power synchronous rectifierLiang, Y.C. ; Lim, C.-Y.; Samudra, G.S. 
472005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
482008Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performanceLee, R.T.-P. ; Koh, A.T.-Y.; Fang, W.-W.; Tan, K.-M.; Lim, A.E.-J.; Liow, T.-Y.; Chow, S.-Y.; Yong, A.M.; Hoong, S.W.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
492007Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETsLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ho, C.-S.; Hoe, K.-M.; Lai, M.Y.; Osipowicz, T. ; Lo, G.-Q.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
502006Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate lengthLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Wong, H.-S.; Lim, P.-C.; Lai, D.M.Y.; Lo, G.-Q.; Tung, C.-H.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
512008On the impact ionization in double-gate MOSFET using full band monte carlo methodBai, P.; Chang, K.; Kajen, R.S.; Li, E.; Samudra, G. 
522007On the performance limit of impact-ionization transistorsShen, C.; Lin, J.-Q.; Toh, E.-H.; Chang, K.-F.; Bait, P.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
532004Optimal power converter topology for powering future microprocessor demandsSingh, R.P.; Khambadkone, A.M. ; Samudra, G.S. ; Liang, Y.C. 
542008P-channel I-MOS transistor featuring silicon nano-wire with multiple-gates, strained Si1-yCy I-region, in situ doped Si 1-yCy source, and sub-5 mV/decade subthreshold swingToh, E.-H.; Wang, G.H.; Weeks, D.; Zhu, M. ; Bauer, M.; Spear, J.; Chan, L.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
552009Partial SOI superjunction power LDMOS for PIC applicationChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Buddharaju, K.D.; Feng, H.
562008Performance enhancement schemes featuring lattice mismatched S/D stressors concurrently realized on CMOS platform: e-SiGeSn S/D for pFETs by Sn+ implant and SiC S/D for nFETs by C+ implantWang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T. ; Tau, K.C.; Samudra, G. ; Yeo, Y.-C. 
572004Pmodelling characteristics of silicon quantum dot flash memory with high-k dielectricsZhou, K.H.; Bai, P.; Chong, C.C.; Samudra, G.S. 
582001Poly Flanked VDMOS (PFVDMOS): A superior technology for superjunction devicesGan, K.P.; Liang, Y.C. ; Samudra, G.S. ; Xu, S.M.; Yong, L.
592006Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drainLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Ang, K.-W.; Chui, K.-J.; Guo, Q.-L.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
602007Progression of superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Feng, H.