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Choi, W.K.

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Full Name
Choi, W.K.
Variants
Choi, W.-K.
Choi Wee Kion
Choi, Wee kiong
Choi, W.K
Choi, W.
Choi Wee Kiong
Choi, W.K.
 
Faculty
 
Email
elechoi@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Department:  PHYSICS

Results 1-20 of 22 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
118-May-2001Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEMHo, Y.W.; Ng, V. ; Choi, W.K. ; Ng, S.P.; Osipowicz, T. ; Seng, H.L. ; Tjui, W.W.; Li, K.
212-Mar-2001Crystalline zirconia oxide on silicon as alternative gate dielectricsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Tjiu, W.C.; Chai, J.W.; Huan, A.C.H.; Yoo, W.J. ; Lim, J.S.; Feng, W.; Choi, W.K. 
331-Dec-2001Effect of current direction on the lifetime of different levels of Cu dual-damascene metallizationGan, C.L.; Thompson, C.V.; Pey, K.L. ; Choi, W.K. ; Tay, H.L.; Yu, B.; Radhakrishnan, M.K.
427-Oct-2003Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structureHo, V.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Tay, M.S.; Antoniadis, D.A.; Fitzgerald, E.A.; Du, A.Y.; Tung, C.H.; Liu, R. ; Wee, A.T.S. 
51-Aug-2005Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicideJin, L.J.; Pey, K.L.; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Chi, D.Z.; Rahman, Md.A.; Osipowicz, T. ; Tung, C.H.
6Mar-2001Electrical properties of crystalline YSZ films on silicon as alternative gate dielectricsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Tjiu, W.C.; Huan, A.C.H.; Yoo, W.J. ; Lim, J.S.; Feng, W.; Choi, W.K. 
72002Experimental characterization of the reliability of 3-terminal dual-damascene copper interconnect treesGan, C.L.; Thompson, C.V.; Pey, K.L. ; Choi, W.K. ; Wei, F.; Yu, B.; Hau-Riege, S.P.
81-Jul-2002Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealingZhao, H.B.; Pey, K.L. ; Choi, W.K. ; Chattopadhyay, S.; Fitzgerald, E.A.; Antoniadis, D.A.; Lee, P.S.
92002Length effects on the reliability of dual-damascene Cu interconnectsWei, F.; Gan, C.L.; Thompson, C.V.; Clement, J.J.; Hau-Riege, S.P.; Pey, K.L. ; Choi, W.K. ; Tay, H.L.; Yu, B.; Radhakrishnan, M.K.
101-Jan-2002Microstructural characterization of rf sputtered polycrystalline silicon germanium filmsChoi, W.K. ; Teh, L.K.; Bera, L.K. ; Chim, W.K. ; Wee, A.T.S. ; Jie, Y.X. 
11Nov-2001N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVDTan, C.S.; Choi, W.K. ; Bera, L.K. ; Pey, K.L. ; Antoniadis, D.A.; Fitzgerald, E.A.; Currie, M.T.; Maiti, C.K.
1220-Nov-2002Nickel silicidation on polycrystalline silicon germanium filmsChoi, W.K. ; Pey, K.L. ; Zhao, H.B.; Osipowicz, T. ; Shen, Z.X. 
1320-Nov-2002Oxidation study of rf sputtered amorphous and polycrstalline silicon germanium filmsLeoy, C.C.; Kan, E.W.H.; Arianto, J.; Choi, W.K. ; Wee, A.T.S. ; Liu, Y.J. 
14Nov-2001Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin filmsNatarajan, A.; Bera, L.K. ; Choi, W.K. ; Osipowicz, T. ; Seng, H.L. 
1515-Feb-2002Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium filmsChoi, W.K. ; Natarajan, A.; Bera, L.K. ; Wee, A.T.S. ; Liu, Y.J. 
162001RHEED and XPS studies of the decomposition of silicon dioxide by the bombardment of metal ionsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Chai, J.W.; Tjiu, W.C.; Pan, J.S.; Huan, A.C.H.; Feng, W.; Lim, J.S.; Yoo, W.J. ; Choi, W.K. 
17Mar-2004Stability and composition of Ni-germanosilicided Si 1-xGe x filmsPey, K.L.; Chattopadhyay, S.; Choi, W.K. ; Miron, Y.; Fitzgerald, E.A.; Antoniadis, D.A.; Osipowicz, T. 
181-Jan-2000Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor depositionChoi, W.K. ; Chen, J.H. ; Bera, L.K. ; Feng, W.; Pey, K.L. ; Mi, J.; Yang, C.Y.; Ramam, A. ; Chua, S.J. ; Pan, J.S. ; Wee, A.T.S. ; Liu, R. 
191-Jun-2000Structural characterization of rapid thermally oxidized silicon-germanium-carbon alloy filmsChoi, W.K. ; Bera, L.K. ; Chen, J.H. ; Feng, W.; Pey, K.L. ; Yoong, H.; Mi, J.; Zhang, F.; Yang, C.Y.
20Sep-2004The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °CJin, L.J.; Pey, K.L. ; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Chi, D.Z.; Tung, C.H.