Please use this identifier to cite or link to this item:
|Title:||Length effects on the reliability of dual-damascene Cu interconnects||Authors:||Wei, F.
|Issue Date:||2002||Citation:||Wei, F.,Gan, C.L.,Thompson, C.V.,Clement, J.J.,Hau-Riege, S.P.,Pey, K.L.,Choi, W.K.,Tay, H.L.,Yu, B.,Radhakrishnan, M.K. (2002). Length effects on the reliability of dual-damascene Cu interconnects. Materials Research Society Symposium - Proceedings 716 : 645-650. ScholarBank@NUS Repository.||Abstract:||We have carried out experiments on dual-damascene Cu interconnects with different lengths. We find that at short lengths, similar to Al-based interconnects, the reliability of Cu-based interconnects improves. Also like Al interconnects, some short Cu segments do not form voids that cause failure before back-stresses prevent the further growth of voids. However, unlike Al-based interconnects, there is no apparent deterministic current-density line-length product (jL) for which all lines are immortal. This is related to the absence of a conducting refractory-metal overlayer in Cu-technology that can shunt current around small voids. Also unlike Al, we find that at long lengths a sub-population of Cu lines is immortal. We propose that this is the result of rupture of the thin refractory metal liner at the base of the dual-damascene Cu vias. As a consequence of this complex behavior, median times to failure and lifetime variationsare minimum at intermediate line lengths.||Source Title:||Materials Research Society Symposium - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/70791||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.