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Title: Length effects on the reliability of dual-damascene Cu interconnects
Authors: Wei, F.
Gan, C.L.
Thompson, C.V.
Clement, J.J.
Hau-Riege, S.P.
Pey, K.L. 
Choi, W.K. 
Tay, H.L.
Yu, B.
Radhakrishnan, M.K.
Issue Date: 2002
Citation: Wei, F.,Gan, C.L.,Thompson, C.V.,Clement, J.J.,Hau-Riege, S.P.,Pey, K.L.,Choi, W.K.,Tay, H.L.,Yu, B.,Radhakrishnan, M.K. (2002). Length effects on the reliability of dual-damascene Cu interconnects. Materials Research Society Symposium - Proceedings 716 : 645-650. ScholarBank@NUS Repository.
Abstract: We have carried out experiments on dual-damascene Cu interconnects with different lengths. We find that at short lengths, similar to Al-based interconnects, the reliability of Cu-based interconnects improves. Also like Al interconnects, some short Cu segments do not form voids that cause failure before back-stresses prevent the further growth of voids. However, unlike Al-based interconnects, there is no apparent deterministic current-density line-length product (jL) for which all lines are immortal. This is related to the absence of a conducting refractory-metal overlayer in Cu-technology that can shunt current around small voids. Also unlike Al, we find that at long lengths a sub-population of Cu lines is immortal. We propose that this is the result of rupture of the thin refractory metal liner at the base of the dual-damascene Cu vias. As a consequence of this complex behavior, median times to failure and lifetime variationsare minimum at intermediate line lengths.
Source Title: Materials Research Society Symposium - Proceedings
ISSN: 02729172
Appears in Collections:Staff Publications

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