The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °C

Abstract

The reaction of Ni with Ge, Si0.75Ge0.25 and Si using rapid thermal annealing (RTA) and in-situ annealing method at 400 °C produces different phases, as revealed by cross-sectional transmission electron microscopy (TEM). A uniform film of nickel germanide (NiGe) was formed at 400 °C for the Ni reaction with Ge using the in-situ annealing technique, whereas Ni3Ge2 and NiGe phases were found using the RTA method. For the reaction between Ni and Si, a highly textured NiSi film was obtained at 400 °C for RTA whereas Ni3Si2 and NiSi were found using the in-situ annealing method. On the other hand, a relatively uniform NiSiGe was formed using RTA; Ni3(Si1-yGe y)2 and Ni(Si1-xGex) (x