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Choi, W.K.

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Full Name
Choi, W.K.
Variants
Choi, W.-K.
Choi Wee Kion
Choi, Wee kiong
Choi, W.K
Choi, W.
Choi Wee Kiong
Choi, W.K.
 
Main Affiliation
 
Faculty
 
Email
elechoi@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Type:  Article

Results 1-20 of 52 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1Mar-2008A combined top-down and bottom-up approach for precise placement of metal nanoparticles on siliconChoi, W.K. ; Liew, T.H. ; Chew, H.G.; Zheng, F.; Thompson, C.V.; Wang, Y.; Hong, M.H. ; Wang, X.D.; Li, L.; Yun, J.
2Sep-2002A high performance MIM capacitor using HfO 2 dielectricsHu, H.; Zhu, C. ; Lu, Y.F. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. 
32004A MONOS-type flash memory using a high-k HfAlO charge trapping layerTan, Y.N.; Chim, W.K. ; Cho, B.J. ; Choi, W.K. 
418-May-2001Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEMHo, Y.W.; Ng, V. ; Choi, W.K. ; Ng, S.P.; Osipowicz, T. ; Seng, H.L. ; Tjui, W.W.; Li, K.
520-Sep-2004Clarifying the origin of near-infrared electroluminescence peaks for nanocrystalline germanium in metal-insulator-silicon structuresKan, E.W.H.; Chim, W.K. ; Lee, C.H.; Choi, W.K. ; Ng, T.H.
62006Conductance-voltage measurements on germanium nanocrystal memory structures and effect of gate electric field couplingNg, T.H.; Chim, W.K. ; Choi, W.K. 
712-Mar-2001Crystalline zirconia oxide on silicon as alternative gate dielectricsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Tjiu, W.C.; Chai, J.W.; Huan, A.C.H.; Yoo, W.J. ; Lim, J.S.; Feng, W.; Choi, W.K. 
88-Sep-2003Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrixKan, E.W.H.; Choi, W.K. ; Leoy, C.C.; Chim, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.
931-Dec-2001Effect of current direction on the lifetime of different levels of Cu dual-damascene metallizationGan, C.L.; Thompson, C.V.; Pey, K.L. ; Choi, W.K. ; Tay, H.L.; Yu, B.; Radhakrishnan, M.K.
1028-Apr-2006Effect of germanium concentration and oxide diffusion barrier on the formation and distribution of germanium nanocrystals in silicon oxide matrixChew, H.G.; Choi, W.K. ; Foo, Y.L.; Zheng, F.; Chim, W.K. ; Voon, Z.J.; Seow, K.C.; Fitzgerald, E.A.; Lai, D.M.Y.
1127-Oct-2003Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structureHo, V.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Tay, M.S.; Antoniadis, D.A.; Fitzgerald, E.A.; Du, A.Y.; Tung, C.H.; Liu, R. ; Wee, A.T.S. 
1215-Mar-2000Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide filmsChoi, W.K. ; Chong, N.B.; Tan, L.S. ; Han, L.J.
13Mar-2001Electrical properties of crystalline YSZ films on silicon as alternative gate dielectricsWang, S.J. ; Ong, C.K. ; Xu, S.Y. ; Chen, P. ; Tjiu, W.C.; Huan, A.C.H.; Yoo, W.J. ; Lim, J.S.; Feng, W.; Choi, W.K. 
1410-Jul-2000Electrical properties of rapid thermal oxides on Si1-x-yGexCy filmsBera, L.K. ; Choi, W.K. ; Feng, W.; Yang, C.Y.; Mi, J.
15Jan-2001Evolution of hillocks during silicon etching in TMAHThong, J.T.L. ; Luo, P.; Choi, W.K. ; Tan, S.C.
16Sep-2004Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectricNg, T.H.; Ho, V.; Teo, L.W.; Tay, M.S.; Koh, B.H.; Chim, W.K. ; Choi, W.K. ; Du, A.Y.; Tung, C.H.
1714-Mar-2007First-principles study of native point defects in hafnia and zirconiaZheng, J.X.; Ceder, G.; Maxisch, T.; Chim, W.K. ; Choi, W.K. 
184-Apr-2005Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealingChoi, W.K. ; Ho, V.; Ng, V. ; Ho, Y.W.; Ng, S.P.; Chim, W.K. 
19Apr-2006Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Cho, B.J. 
20Aug-2001High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 filmsBera, L.K. ; Choi, W.K. ; Tan, C.S.; Samanta, S.K.; Maiti, C.K.