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ELECTRICAL AND COMPUTER ENGINEERING
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ELECTRICAL AND COMPUTER ENGINEERING
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Results 1701-1720 of 15308 (Search time: 0.009 seconds).
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Issue Date
Title
Author(s)
1701
13-Apr-2022
Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor
Tsai Shih-Hao
;
Fang Zihang
;
WANG XINGHUA
;
UMESH CHAND
;
Chun-Kuei Chen
;
SONU DEVI
;
SIVAN MAHESWARI
;
JIEMING PAN
;
Evgeny Zamburg
;
THEAN VOON YEW, AARON
1702
2001
Stress-induced leakage current in thin oxides under high-field impulse stressing
Tan, Y.N.
;
Chim, W.K.
;
Lim, P.S.
1703
1999
Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
Lim, P.S.
;
Chim, W.K.
1704
2003
Stress classification using subband based features
Nwe, T.L.
;
Foo, S.W.
;
De Silva, L.C.
5
2012
Street-to-shop: Cross-scenario clothing retrieval via parts alignment and auxiliary set
Liu, S.
;
Song, Z.
;
Wang, M.
;
Xu, C.
;
Lu, H.
;
Yan, S.
6
2012
Street-to-shop: Cross-scenario clothing retrieval via parts alignment and auxiliary set
Liu, S.
;
Song, Z.
;
Liu, G.
;
Xu, C.
;
Lu, H.
;
Yan, S.
7
2006
Stream authentication based on generlized butterfly graph
Zhang, Z.
;
Apostolopoulos, J.
;
Sun, Q.
;
Wee, S.
;
Wong, W.-C.
8
Nov-1990
Strategy for the instantaneous torque control of permanent-magnet brushless DC drives
Low, T.S.
;
Tseng, K.J.
;
Lee, T.H.
;
Lim, K.W.
;
Lock, K.S.
9
1992
Strategic plan of an Electrical Engineering Department in Singapore: A blueprint for the 1990s and beyond
Liew, A.-C.
;
Hang, C.C.
10
Sep-2006
Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
Chui, K.-J.
;
Ang, K.-W.
;
Chin, H.-C.
;
Shen, C.
;
Wong, L.-Y.
;
Tung, C.-H.
;
Balasubramanian, N.
;
Li, M.F.
;
Samudra, G.S.
;
Yeo, Y.-C.
11
Jun-2007
Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance
Ang, K.-W.
;
Chui, K.-J.
;
Madan, A.
;
Wong, L.-Y.
;
Tung, C.-H.
;
Balasubramanian, N.
;
Li, M.-F.
;
Samudra, G.S.
;
Yeo, Y.-C.
12
2006
Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner
Wang, G.H.
;
Toh, E.-H.
;
Toh
;
Hoe, K.M.
;
Tripathy, S.
;
Balakurnar, S.
;
Lo, G.-Q.
;
Samudra, G.
;
Yeo, Y.-C.
13
Jan-2008
Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors
Wang, G.H.
;
Toh, E.-H.
;
Du, A.
;
Lo, G.-Q.
;
Samudra, G.
;
Yeo, Y.-C.
14
24-Apr-2007
Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
Wang, G.H.
;
Toh, E.-H.
;
Tung, C.-H.
;
Du, A.
;
Lo, G.-Q.
;
Samudra, G.
;
Yeo, Y.-C.
15
2004
Strained silicon substrate technologies for enhancement of transistor performance
Mei, P.
;
Yeo, Y.-C.
16
2008
Strained silicon nanowire transistors with germanium source and drain stressors
Liow, T.-Y.
;
Tan, K.-M.
;
Lee, R.T.P.
;
Zhu, M.
;
Tan, B.L.-H.
;
Balasubramanian, N.
;
Yeo, Y.-C.
17
Dec-2010
Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressor
Liu, B.
;
Wong, H.-S.
;
Yang, M.
;
Yeo, Y.-C.
18
2007
Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing
Wang, G.H.
;
Toh, E.-H.
;
Wang, X.
;
Tripathy, S.
;
Osipowicz, T.
;
Chan, T.K.
;
Hoe, K.-M.
;
Balakumar, S.
;
Lo, G.-Q.
;
Samudra, G.
;
Yeo, Y.-C.
19
Dec-2007
Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
Loh, W.-Y.
;
Zang, H.
;
Oh, H.-J.
;
Choi, K.-J.
;
Nguyen, H.S.
;
Lo, G.-Q.
;
Cho, B.J.
20
2007
Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement
Wang, G.H.
;
Toh, E.-H.
;
Weeks, D.
;
Landin, T.
;
Spear, J.
;
Tung, C.H.
;
Thomas, S.G.
;
Samudra, G.
;
Yeo, Y.-C.
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