ELECTRICAL AND COMPUTER ENGINEERING

Organization name
ELECTRICAL AND COMPUTER ENGINEERING


Results 1701-1720 of 15308 (Search time: 0.009 seconds).

Issue DateTitleAuthor(s)
170113-Apr-2022Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect MemtransistorTsai Shih-Hao; Fang Zihang; WANG XINGHUA ; UMESH CHAND ; Chun-Kuei Chen; SONU DEVI ; SIVAN MAHESWARI; JIEMING PAN; Evgeny Zamburg ; THEAN VOON YEW, AARON 
17022001Stress-induced leakage current in thin oxides under high-field impulse stressingTan, Y.N.; Chim, W.K. ; Lim, P.S.
17031999Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressingLim, P.S.; Chim, W.K. 
17042003Stress classification using subband based featuresNwe, T.L. ; Foo, S.W.; De Silva, L.C. 
52012Street-to-shop: Cross-scenario clothing retrieval via parts alignment and auxiliary setLiu, S. ; Song, Z. ; Wang, M.; Xu, C.; Lu, H.; Yan, S. 
62012Street-to-shop: Cross-scenario clothing retrieval via parts alignment and auxiliary setLiu, S. ; Song, Z. ; Liu, G. ; Xu, C.; Lu, H.; Yan, S. 
72006Stream authentication based on generlized butterfly graphZhang, Z.; Apostolopoulos, J.; Sun, Q.; Wee, S.; Wong, W.-C. 
8Nov-1990Strategy for the instantaneous torque control of permanent-magnet brushless DC drivesLow, T.S. ; Tseng, K.J.; Lee, T.H. ; Lim, K.W. ; Lock, K.S. 
91992Strategic plan of an Electrical Engineering Department in Singapore: A blueprint for the 1990s and beyondLiew, A.-C. ; Hang, C.C. 
10Sep-2006Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancementChui, K.-J.; Ang, K.-W.; Chin, H.-C.; Shen, C.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.F. ; Samudra, G.S. ; Yeo, Y.-C. 
11Jun-2007Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performanceAng, K.-W.; Chui, K.-J.; Madan, A.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
122006Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride linerWang, G.H.; Toh, E.-H.; Toh; Hoe, K.M.; Tripathy, S.; Balakurnar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
13Jan-2008Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressorsWang, G.H.; Toh, E.-H.; Du, A.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1424-Apr-2007Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Du, A.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
152004Strained silicon substrate technologies for enhancement of transistor performanceMei, P.; Yeo, Y.-C. 
162008Strained silicon nanowire transistors with germanium source and drain stressorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Balasubramanian, N.; Yeo, Y.-C. 
17Dec-2010Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressorLiu, B.; Wong, H.-S.; Yang, M.; Yeo, Y.-C. 
182007Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealingWang, G.H.; Toh, E.-H.; Wang, X.; Tripathy, S.; Osipowicz, T. ; Chan, T.K. ; Hoe, K.-M.; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
19Dec-2007Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performanceLoh, W.-Y.; Zang, H.; Oh, H.-J. ; Choi, K.-J.; Nguyen, H.S.; Lo, G.-Q.; Cho, B.J. 
202007Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancementWang, G.H.; Toh, E.-H.; Weeks, D.; Landin, T.; Spear, J.; Tung, C.H.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C.