Please use this identifier to cite or link to this item: https://doi.org/10.1021/acsaelm.1c01321
Title: Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor
Authors: Tsai Shih-Hao
Fang Zihang
WANG XINGHUA 
UMESH CHAND 
Chun-Kuei Chen
SONU DEVI 
SIVAN MAHESWARI
JIEMING PAN
Evgeny Zamburg 
THEAN VOON YEW, AARON 
Issue Date: 13-Apr-2022
Citation: Tsai Shih-Hao, Fang Zihang, WANG XINGHUA, UMESH CHAND, Chun-Kuei Chen, SONU DEVI, SIVAN MAHESWARI, JIEMING PAN, Evgeny Zamburg, THEAN VOON YEW, AARON (2022-04-13). Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor. ScholarBank@NUS Repository. https://doi.org/10.1021/acsaelm.1c01321
URI: https://scholarbank.nus.edu.sg/handle/10635/224436
DOI: 10.1021/acsaelm.1c01321
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