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Please use this identifier to cite or link to this item: https://doi.org/10.1021/acsaelm.1c01321
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dc.titleStress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor
dc.contributor.authorTsai Shih-Hao
dc.contributor.authorFang Zihang
dc.contributor.authorWANG XINGHUA
dc.contributor.authorUMESH CHAND
dc.contributor.authorChun-Kuei Chen
dc.contributor.authorSONU DEVI
dc.contributor.authorSIVAN MAHESWARI
dc.contributor.authorJIEMING PAN
dc.contributor.authorEvgeny Zamburg
dc.contributor.authorTHEAN VOON YEW, AARON
dc.date.accessioned2022-04-28T05:39:47Z
dc.date.available2022-04-28T05:39:47Z
dc.date.issued2022-04-13
dc.identifier.citationTsai Shih-Hao, Fang Zihang, WANG XINGHUA, UMESH CHAND, Chun-Kuei Chen, SONU DEVI, SIVAN MAHESWARI, JIEMING PAN, Evgeny Zamburg, THEAN VOON YEW, AARON (2022-04-13). Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor. ScholarBank@NUS Repository. https://doi.org/10.1021/acsaelm.1c01321
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/224436
dc.language.isoen
dc.typeArticle
dc.contributor.departmentDEAN'S OFFICE (ENGINEERING)
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1021/acsaelm.1c01321
dc.published.statePublished
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