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|Title:||Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance||Authors:||Loh, W.-Y.
Field effect transistors
|Issue Date:||Dec-2007||Citation:||Loh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H.S., Lo, G.-Q., Cho, B.J. (2007-12). Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance. IEEE Transactions on Electron Devices 54 (12) : 3292-3298. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.908599||Abstract:||We report a novel Si/Si1-xGex channel with improved noise, current drivability, and reliability using a buried Si0.99C0.01, which can induce higher channel strain for the same Ge concentration. High-κ dielectrics on Si/ Si1-xGex with buried Si0.99 C0.01 show lower charge trapping, better leakage current distribution and less flatband voltage shift. Si/Si1-x Gex channel p-MOSFET with the buried Si0.99 C0.01 shows drive current improvement of up to 20% and better noise immunity. © 2007 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/83082||ISSN:||00189383||DOI:||10.1109/TED.2007.908599|
|Appears in Collections:||Staff Publications|
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