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https://doi.org/10.1109/LED.2010.2074182
Title: | Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressor | Authors: | Liu, B. Wong, H.-S. Yang, M. Yeo, Y.-C. |
Keywords: | Diamond-like carbon (DLC) nanowire p-FET strain |
Issue Date: | Dec-2010 | Citation: | Liu, B., Wong, H.-S., Yang, M., Yeo, Y.-C. (2010-12). Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressor. IEEE Electron Device Letters 31 (12) : 1371-1373. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2074182 | Abstract: | We report the first integration of a high-compressive-stress diamond-like carbon (DLC) liner stressor with gate-all-around Si nanowire p-channel field-effect transistor (FET). DLC liner stressors with thicknesses of ∼20 and ∼ 40 nm were formed on p-FETs to induce high compressive strain in the channel region. As compared with nanowire p-FETs without liner stressor, substantial enhancements in ION and saturation transconductance GMSat were observed on p-FETs with DLC liner stressors. A thicker DLC liner stressor leads to a larger performance enhancement. © 2006 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/83083 | ISSN: | 07413106 | DOI: | 10.1109/LED.2010.2074182 |
Appears in Collections: | Staff Publications |
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