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|Title:||Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressor|
|Keywords:||Diamond-like carbon (DLC)|
|Citation:||Liu, B., Wong, H.-S., Yang, M., Yeo, Y.-C. (2010-12). Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressor. IEEE Electron Device Letters 31 (12) : 1371-1373. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2074182|
|Abstract:||We report the first integration of a high-compressive-stress diamond-like carbon (DLC) liner stressor with gate-all-around Si nanowire p-channel field-effect transistor (FET). DLC liner stressors with thicknesses of ∼20 and ∼ 40 nm were formed on p-FETs to induce high compressive strain in the channel region. As compared with nanowire p-FETs without liner stressor, substantial enhancements in ION and saturation transconductance GMSat were observed on p-FETs with DLC liner stressors. A thicker DLC liner stressor leads to a larger performance enhancement. © 2006 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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