Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2074182
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dc.titleStrained silicon nanowire p-channel FETs with diamond-like carbon liner stressor
dc.contributor.authorLiu, B.
dc.contributor.authorWong, H.-S.
dc.contributor.authorYang, M.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:37:03Z
dc.date.available2014-10-07T04:37:03Z
dc.date.issued2010-12
dc.identifier.citationLiu, B., Wong, H.-S., Yang, M., Yeo, Y.-C. (2010-12). Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressor. IEEE Electron Device Letters 31 (12) : 1371-1373. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2074182
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83083
dc.description.abstractWe report the first integration of a high-compressive-stress diamond-like carbon (DLC) liner stressor with gate-all-around Si nanowire p-channel field-effect transistor (FET). DLC liner stressors with thicknesses of ∼20 and ∼ 40 nm were formed on p-FETs to induce high compressive strain in the channel region. As compared with nanowire p-FETs without liner stressor, substantial enhancements in ION and saturation transconductance GMSat were observed on p-FETs with DLC liner stressors. A thicker DLC liner stressor leads to a larger performance enhancement. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2010.2074182
dc.sourceScopus
dc.subjectDiamond-like carbon (DLC)
dc.subjectnanowire
dc.subjectp-FET
dc.subjectstrain
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2010.2074182
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume31
dc.description.issue12
dc.description.page1371-1373
dc.description.codenEDLED
dc.identifier.isiut000284541400005
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