Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressor

Abstract

We report the first integration of a high-compressive-stress diamond-like carbon (DLC) liner stressor with gate-all-around Si nanowire p-channel field-effect transistor (FET). DLC liner stressors with thicknesses of ∼20 and ∼ 40 nm were formed on p-FETs to induce high compressive strain in the channel region. As compared with nanowire p-FETs without liner stressor, substantial enhancements in ION and saturation transconductance GMSat were observed on p-FETs with DLC liner stressors. A thicker DLC liner stressor leads to a larger performance enhancement. © 2006 IEEE.