Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressor

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2074182

Title:	Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressor
Authors:	Liu, B. Wong, H.-S. Yang, M. Yeo, Y.-C.
Keywords:	Diamond-like carbon (DLC) nanowire p-FET strain
Issue Date:	Dec-2010
Citation:	Liu, B., Wong, H.-S., Yang, M., Yeo, Y.-C. (2010-12). Strained silicon nanowire p-channel FETs with diamond-like carbon liner stressor. IEEE Electron Device Letters 31 (12) : 1371-1373. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2074182
Abstract:	We report the first integration of a high-compressive-stress diamond-like carbon (DLC) liner stressor with gate-all-around Si nanowire p-channel field-effect transistor (FET). DLC liner stressors with thicknesses of ∼20 and ∼ 40 nm were formed on p-FETs to induce high compressive strain in the channel region. As compared with nanowire p-FETs without liner stressor, substantial enhancements in ION and saturation transconductance GMSat were observed on p-FETs with DLC liner stressors. A thicker DLC liner stressor leads to a larger performance enhancement. © 2006 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/83083
ISSN:	07413106
DOI:	10.1109/LED.2010.2074182
Appears in Collections:	Staff Publications

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