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https://doi.org/10.1109/TED.2008.2005153
| Title: | Strained silicon nanowire transistors with germanium source and drain stressors | Authors: | Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Tan, B.L.-H. Balasubramanian, N. Yeo, Y.-C. |
Keywords: | Germanium stressors Silicon-germanium stressors Strained silicon nanowires |
Issue Date: | 2008 | Citation: | Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C. (2008). Strained silicon nanowire transistors with germanium source and drain stressors. IEEE Transactions on Electron Devices 55 (11) : 3048-3055. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.2005153 | Abstract: | We report the first demonstration of pure germanium (Ge) source/drain (S/ D) stressors on the ultranarrow or ultrathin Si S/D regions of nanowire FETs with gate lengths down to 5 nm. Ge S/D compressively strains the channel to provide up to ∼100% IDsat enhancement. We also introduce a novel Melt-Enhanced Dopant diffusion and activation technique to form fully embedded Si0.15Ge0.85 S/D stressors in nanowire FETs, further boosting the channel strain and achieving ∼125% IDsat enhancement. © 2008 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/83084 | ISSN: | 00189383 | DOI: | 10.1109/TED.2008.2005153 |
| Appears in Collections: | Staff Publications |
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