Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2008.2005153
| Title: | Strained silicon nanowire transistors with germanium source and drain stressors | Authors: | Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Tan, B.L.-H. Balasubramanian, N. Yeo, Y.-C. |
Keywords: | Germanium stressors Silicon-germanium stressors Strained silicon nanowires |
Issue Date: | 2008 | Citation: | Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C. (2008). Strained silicon nanowire transistors with germanium source and drain stressors. IEEE Transactions on Electron Devices 55 (11) : 3048-3055. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.2005153 | Abstract: | We report the first demonstration of pure germanium (Ge) source/drain (S/ D) stressors on the ultranarrow or ultrathin Si S/D regions of nanowire FETs with gate lengths down to 5 nm. Ge S/D compressively strains the channel to provide up to ∼100% IDsat enhancement. We also introduce a novel Melt-Enhanced Dopant diffusion and activation technique to form fully embedded Si0.15Ge0.85 S/D stressors in nanowire FETs, further boosting the channel strain and achieving ∼125% IDsat enhancement. © 2008 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/83084 | ISSN: | 00189383 | DOI: | 10.1109/TED.2008.2005153 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
4
checked on Oct 16, 2020
WEB OF SCIENCETM
Citations
3
checked on Oct 16, 2020
Page view(s)
75
checked on Oct 4, 2020
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.