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Cho Byung-Jin

rp04188

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

Results 121-140 of 144 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
121Nov-1999Role of hole fluence in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.-J. ; Lo, K.F.; Xu, M.Z.
1222000Roles of primary hot hole and FN electron fluences in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.J. ; Lo, K.F.
1232007Schottky-barrier si nanowire mosfet: Effects of source/drain metals and gate dielectricsYang, W.; Whang, S. ; Lee, S. ; Zhu, H.; Gu, H.; Cho, B. 
124Jul-2006SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stackGao, F.; Lee, S.J. ; Rui, L.; Wang, S.J. ; Cho, B.J. ; Balakumar, S.; Tung, C.-H.; Chi, D.Z.; Kwong, D.L.
1252003Silicon Nanostructured Films Formed by Pulsed-Laser Deposition in Inert Gas and Reactive GasChen, X.Y.; Lu, Y.F. ; Wu, Y.H. ; Cho, B.J. ; Hu, H.
126Dec-2005Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectricJoo, M.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
127Dec-2007Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performanceLoh, W.-Y.; Zang, H.; Oh, H.-J. ; Choi, K.-J.; Nguyen, H.S.; Lo, G.-Q.; Cho, B.J. 
1281999Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV techniqueGuan, Hao; Cho, Byung Jin ; Li, M.F. ; He, Y.D. ; Xu, Zhen; Dong, Zhong
1292007Study on the synthesis of high quality single crystalline Si1-x Gex nanowire and its transport propertiesWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Cho, B.J. ; Kwong, D.L.
1302004Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning freePark, C.S. ; Cho, B.J. ; Tang, L.J.; Kwong, D.-L.
131Apr-2002Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridationAng, C.H.; Tan, S.S.; Lek, C.M.; Lin, W.; Zheng, Z.J.; Chen, T.; Cho, B.J. 
1322007Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowireWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Cho, B.J. ; Liew, Y.F.; Kwong, D.L.
133Dec-2007Tensile-strained germanium CMOS integration on siliconZang, H.; Loh, W.Y. ; Ye, J.D.; Lo, G.Q.; Cho, B.J. 
1342007The effect of interfacial layer of high-K dielectrics on GaAs substrateTong, Y.; Dalapati, G.K.; Oh, H.J. ; Cho, B.J. 
1352003The mechanisms of photoluminescence from Si nanocrystals formed by pulsed-laser depositionChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. 
136Nov-2004Thermal instability of effective work function in metal/high-κ stack and its material dependenceJoo, M.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
1374-Nov-2002Thermal stability of (HfO2)x(Al2O 3)1-x on SiYu, H.Y. ; Wu, N.; Li, M.F. ; Zhu, C. ; Cho, B.J. ; Kwong, D.-L.; Tung, C.H.; Pan, J.S.; Chai, J.W.; Wang, W.D.; Chi, D.Z.; Ang, C.H.; Zheng, J.Z.; Ramanathan, S.
1382006Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2gate dielectricYeo, C.C. ; Cho, B.J. ; Lee, M.H.; Liu, C.W.; Choi, K.J.; Lee, T.W.
1397-Dec-2006Thermally stable fully silicided Hf silicide metal gate electrodePARK, CHANG SEO ; CHO, BYUNG JIN 
140Jun-2004Thermally stable fully silicided Hf-silicide metal-gate electrodePark, C.S. ; Cho, B.J. ; Kwong, D.-L.