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https://doi.org/10.1109/LED.2005.859631
| Title: | Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric | Authors: | Joo, M.S. Cho, B.J. Balasubramanian, N. Kwong, D.-L. |
Keywords: | Effective work function Fermi-level pinning Fully silicided (FUSI) gate High-K Ni-silicided gate |
Issue Date: | Dec-2005 | Citation: | Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L. (2005-12). Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric. IEEE Electron Device Letters 26 (12) : 882-884. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.859631 | Abstract: | Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (Ccr it) above which there is no Fermi-level pinning, and the Ccr it depends on the underlying gate dielectric material also. © 2005 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/83073 | ISSN: | 07413106 | DOI: | 10.1109/LED.2005.859631 |
| Appears in Collections: | Staff Publications |
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