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|Title:||Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric||Authors:||Joo, M.S.
|Keywords:||Effective work function
Fully silicided (FUSI) gate
|Issue Date:||Dec-2005||Citation:||Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L. (2005-12). Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric. IEEE Electron Device Letters 26 (12) : 882-884. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.859631||Abstract:||Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (Ccr it) above which there is no Fermi-level pinning, and the Ccr it depends on the underlying gate dielectric material also. © 2005 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83073||ISSN:||07413106||DOI:||10.1109/LED.2005.859631|
|Appears in Collections:||Staff Publications|
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