Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.859631
Title: Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
Authors: Joo, M.S. 
Cho, B.J. 
Balasubramanian, N.
Kwong, D.-L.
Keywords: Effective work function
Fermi-level pinning
Fully silicided (FUSI) gate
High-K
Ni-silicided gate
Issue Date: Dec-2005
Source: Joo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L. (2005-12). Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric. IEEE Electron Device Letters 26 (12) : 882-884. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.859631
Abstract: Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (Ccr it) above which there is no Fermi-level pinning, and the Ccr it depends on the underlying gate dielectric material also. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83073
ISSN: 07413106
DOI: 10.1109/LED.2005.859631
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