Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.859631
DC FieldValue
dc.titleStoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
dc.contributor.authorJoo, M.S.
dc.contributor.authorCho, B.J.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:36:56Z
dc.date.available2014-10-07T04:36:56Z
dc.date.issued2005-12
dc.identifier.citationJoo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L. (2005-12). Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric. IEEE Electron Device Letters 26 (12) : 882-884. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.859631
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83073
dc.description.abstractStoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (Ccr it) above which there is no Fermi-level pinning, and the Ccr it depends on the underlying gate dielectric material also. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.859631
dc.sourceScopus
dc.subjectEffective work function
dc.subjectFermi-level pinning
dc.subjectFully silicided (FUSI) gate
dc.subjectHigh-K
dc.subjectNi-silicided gate
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.859631
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue12
dc.description.page882-884
dc.description.codenEDLED
dc.identifier.isiut000233681700008
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

4
checked on Apr 10, 2021

WEB OF SCIENCETM
Citations

3
checked on Apr 2, 2021

Page view(s)

66
checked on Apr 12, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.