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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.859631
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dc.titleStoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
dc.contributor.authorJoo, M.S.
dc.contributor.authorCho, B.J.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:36:56Z
dc.date.available2014-10-07T04:36:56Z
dc.date.issued2005-12
dc.identifier.citationJoo, M.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L. (2005-12). Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric. IEEE Electron Device Letters 26 (12) : 882-884. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.859631
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83073
dc.description.abstractStoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (Ccr it) above which there is no Fermi-level pinning, and the Ccr it depends on the underlying gate dielectric material also. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.859631
dc.sourceScopus
dc.subjectEffective work function
dc.subjectFermi-level pinning
dc.subjectFully silicided (FUSI) gate
dc.subjectHigh-K
dc.subjectNi-silicided gate
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.859631
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue12
dc.description.page882-884
dc.description.codenEDLED
dc.identifier.isiut000233681700008
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