Please use this identifier to cite or link to this item:
|Title:||Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation||Authors:||Ang, C.H.
|Issue Date:||Apr-2002||Citation:||Ang, C.H., Tan, S.S., Lek, C.M., Lin, W., Zheng, Z.J., Chen, T., Cho, B.J. (2002-04). Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation. Electrochemical and Solid-State Letters 5 (4) : G26-G28. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1459682||Abstract:||The impact of nitrogen plasma nitridation on the interfacial quality of ultrathin oxides (1.8 and 2.6 nm) have been investigated and compared with NO nitridation. It is found that plasma-nitrided oxides are more immune to nitridation-induced degradation of channel hole mobility, and have lower intrinsic interface-trap density as compared to NO-nitrided oxides. In addition, plasma-nitrided oxides can further suppress hole mobility degradation induced by boron penetration. The superior performance of nitrogen plasma nitridation is attributed to its capability of incorporating a high level of nitrogen at the top oxide surface, while keeping the Si-SiO2 interface intact.||Source Title:||Electrochemical and Solid-State Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83119||ISSN:||10990062||DOI:||10.1149/1.1459682|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 3, 2020
WEB OF SCIENCETM
checked on Jul 27, 2020
checked on Aug 2, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.