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|Title:||Thermally stable fully silicided Hf-silicide metal-gate electrode||Authors:||Park, C.S.
Hf-silicide and work-function
|Issue Date:||Jun-2004||Citation:||Park, C.S., Cho, B.J., Kwong, D.-L. (2004-06). Thermally stable fully silicided Hf-silicide metal-gate electrode. IEEE Electron Device Letters 25 (6) : 372-374. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.829043||Abstract:||We demonstrate, for the first time, thermally stable fully silicided (FUSI) Hf-silicide gate electrode whose workfunction (4.2 eV) is very close to that of n+ polysilicon. No polysilicon depletion effect and excellent thermal stability with negligible change in equivalent oxide thickness and flatband voltage even after high-temperature annealing at 950°C are demonstrated. These results indicate that FUSI Hf-silicide is a promising candidate for n-MOSFET metal-gate electrode for dual-metal CMOS process.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/68066||ISSN:||07413106||DOI:||10.1109/LED.2004.829043|
|Appears in Collections:||Staff Publications|
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