Please use this identifier to cite or link to this item:
|Title:||SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack||Authors:||Gao, F.
|Issue Date:||Jul-2006||Citation:||Gao, F., Lee, S.J., Rui, L., Wang, S.J., Cho, B.J., Balakumar, S., Tung, C.-H., Chi, D.Z., Kwong, D.L. (2006-07). SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack. Electrochemical and Solid-State Letters 9 (7) : G222-G224. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2197127||Abstract:||We demonstrate high Ge percentage thin silicon germanium on insulator (SGOI) p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) using Ni-germanosilicide Schottky source/drain (S/D) and HfO2 TaN gate stack integrated with conventional self-aligned top gate process. Unlike high-temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic and low gate leakage current. SGOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current. In addition, extracted peak hole mobility is comparable to that of conventional bulk Ge p-MOSFET with HfO2 TaN gate stack. © 2006 The Electrochemical Society.||Source Title:||Electrochemical and Solid-State Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83016||ISSN:||10990062||DOI:||10.1149/1.2197127|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 12, 2021
WEB OF SCIENCETM
checked on Jun 4, 2021
checked on Jun 9, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.