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Cho Byung-Jin

rp04188

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

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Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 1-20 of 121 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
12004A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectricsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.
2Sep-2002A high performance MIM capacitor using HfO 2 dielectricsHu, H.; Zhu, C. ; Lu, Y.F. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. 
3Feb-2003A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectricsYu, X.; Zhu, C. ; Hu, H.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
42004A MONOS-type flash memory using a high-k HfAlO charge trapping layerTan, Y.N.; Chim, W.K. ; Cho, B.J. ; Choi, W.K. 
52003A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer LayerPark, C.S. ; Cho, B.J. ; Yan, D.A.; Balasubramanian, N.; Kwong, D.-L.
62007A novel hafnium carbide (HfCx) metal gate electrode for NMOS device applicationWan, S.H.; Chen, S.; Xing, P.W.; Chan, D.S.H. ; Byung, J.C. 
72002Advanced laser applications in microelectronics and data storage devices (invited)Lu, Y.F.; Song, W.D. ; Ren, Z.M.; An, C.W.; Liu, D.M.; Wang, W.J. ; Cho, B.J. ; Zeng, J.N. ; Tan, C.F.
8Mar-2004Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual GatesYu, D.S.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
9May-2003An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layerPark, C.S. ; Cho, B.J. ; Kwong, D.-L.
102003Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier SeparationLoh, W.Y. ; Cho, B.C. ; Joo, M.S. ; Li, M.F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
111-Jan-2005Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor depositionChen, X.Y.; Lu, Y.F.; Tang, L.J.; Wu, Y.H. ; Cho, B.J. ; Xu, X.J.; Dong, J.R.; Song, W.D.
122008Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanismZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.; Cho, B.J. 
13Mar-2006Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applicationsZhu, C. ; Cho, B.-J. ; Li, M.-F. 
1411-Jul-2007B-doping of vapour-liquid-solid grown Au-catalysed and Al-catalysed Si nanowires: Effects of B2H6 gas during Si nanowire growth and B-doping by a post-synthesis in situ plasma processWhang, S.-J. ; Lee, S. ; Chi, D.-Z.; Yang, W.-F.; Cho, B.-J. ; Liew, Y.-F. ; Kwong, D.-L.
152001Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxidesLoh, W.Y. ; Cho, B.J. ; Li, M.F. 
16Aug-2007Border-trap characterization in high-κ strained-Si MOSFETsMaji, D.; Duttagupta, S.P.; Rao, V.R.; Yeo, C.C.; Cho, B.-J. 
172004Boron profile narrowing in laser-processed silicon after rapid thermal annealPoon, C.H.; Tan, L.S. ; Cho, B.J. ; See, A.; Bhat, M.
18Jul-2008Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memoryPu, J. ; Kim, S.-J.; Lee, S.-H.; Kim, Y.-S.; Kim, S.-T.; Choi, K.-J.; Cho, B.J. 
19Sep-2004Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETsMathew, S.; Bera, L.K.; Balasubramanian, N.; Joo, M.S. ; Cho, B.J. 
20Dec-2004Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separationLoh, W.-Y. ; Cho, B.J. ; Joo, M.S. ; Li, M.-F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.