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Cho Byung-Jin

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

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Department:  COLLEGE OF DESIGN AND ENGINEERING
Author:  Cho, B.J.
Type:  Article

Results 1-20 of 23 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1Sep-2002A high performance MIM capacitor using HfO 2 dielectricsHu, H.; Zhu, C. ; Lu, Y.F. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. 
2Feb-2003A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectricsYu, X.; Zhu, C. ; Hu, H.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
3Mar-2004Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual GatesYu, D.S.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
41-Jan-2005Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor depositionChen, X.Y.; Lu, Y.F.; Tang, L.J.; Wu, Y.H. ; Cho, B.J. ; Xu, X.J.; Dong, J.R.; Song, W.D.
5Mar-2006Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applicationsZhu, C. ; Cho, B.-J. ; Li, M.-F. 
630-Dec-2006Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor depositionChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Tang, L.J.; Lu, D.; Dong, J.R.
7Aug-2000Design of LIGBT protection circuit for smart power integrationLuo, J.; Liang, Y.C. ; Cho, B.J. 
810-May-2004Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrateWu, N.; Zhang, Q.; Zhu, C. ; Yeo, C.C.; Whang, S.J. ; Chan, D.S.H. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
9Oct-2004Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterpartsDing, S.-J. ; Hu, H.; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Du, A.Y.; Chin, A.; Kwong, D.-L.
10Dec-2003High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate DielectricsDing, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
11Aug-2004Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectricKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Zhu, C. ; Yu, M.B.; Narayanan, B.; Chin, A.; Kwong, D.-L.
12Nov-2005Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF applicationYu, M.B.; Xiong, Y.Z.; Kim, S.-J. ; Balakumar, S.; Zhu, C. ; Li, M.-F. ; Cho, B.-J. ; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
13Feb-2004Laser annealing of silicon nanocrystal films formed by pulsed-laser depositionTan, C.F.; Chen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Zeng, J.N. 
14Jul-2004Laser annealing of silicon nanocrystal films prepared by pulsed-laser depositionChen, X.Y.; Lu, Y.F. ; Wu, Y.H. ; Cho, B.J. ; Yang, B.J.; Liew, T.Y.F. 
1515-May-2003Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambientChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Liu, M.H. ; Dai, D.Y.; Song, W.D. 
16Sep-2005Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriersKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
17Feb-2003MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectricsHu, H.; Zhu, C. ; Yu, X.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.; Liu, X.; Winkler, J.
1815-Sep-2004Optical properties of SiO x nanostructured films by pulsed-laser deposition at different substrate temperaturesChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Song, W.D.; Dai, D.Y.
1912-Aug-2002Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiationChen, X.Y.; Lu, Y.F. ; Cho, B.J. ; Zeng, Y.P.; Zeng, J.N. ; Wu, Y.H. 
201-Jul-2003Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applicationsHu, H.; Zhu, C. ; Lu, Y.F. ; Wu, Y.H. ; Liew, T. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. ; Yakovlev, N.