1. ScholarBank@NUS

Lee Sungjoo

rp01794

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Lee Sungjoo
(not current staff)
Variants
Sung-Joo, L.E.E.
Lee, S.
Lee, S.J.
LEE, SUNGJOO
Lee, S.-J.
 
Main Affiliation
 
Faculty
 
Email
elelsj@nus.edu.sg
 

Publications

Results 41-60 of 83 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
412007Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrateDalapati, G.K.; Sridhara, A.; Wong, A.S.W.; Chia, C.K.; Lee, S.J. ; Chi, D.
422008Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gateLin, J.Q.; Lee, S.J. ; Oh, H.J. ; Lo, G.Q.; Kwong, D.L.; Chi, D.Z.
43Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
44Sep-2008Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguideWang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Tan, S.M.F.; Yu, M.B.; Lee, S.J. ; Lo, G.Q.; Kwong, D.L.
452006Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistorsYao, H.B.; Tan, C.C.; Liew, S.L.; Chua, C.T.; Chua, C.K.; Li, R.; Lee, R.T.P. ; Lee, S.J. ; Chi, D.Z.
4610-May-2006Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technologyLi, R.; Yao, H.B.; Lee, S.J. ; Chi, D.Z.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.
72007Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrateGao, F.; Li, R.; Chi, D.Z.; Balakumar, S.; Lee, S.J. 
82005Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edgeYu, H.Y.; Chen, J.D. ; Li, M.F. ; Lee, S.J. ; Kwong, D.L.; Van Dal, M.; Kittl, J.A.; Lauwers, A.; Augendre, E.; Kubicek, S.; Zhao, C.; Bender, H.; Brijs, B.; Geenen, L.; Benedetti, A.; Absil, P.; Jurczak, M.; Biesemans, S.
9Aug-2004N-type Schottky barrier source/drain MOSFET using Ytterbium silicideZhu, S. ; Chen, J. ; Li, M.-F. ; Lee, S.J. ; Singh, J.; Zhu, C.X. ; Du, A.; Tung, C.H.; Chin, A.; Kwong, D.L.
102005New developments in Schottky source/drain high-k/metal gate CMOS transistorsLi, M.-F. ; Lee, S. ; Zhu, S. ; Li, R.; Chen, J. ; Chin, A. ; Kwong, D.L.
11Oct-2007NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectricChen, J. ; Wang, X.P.; Li, M.-F. ; Lee, S.J. ; Yu, M.B.; Shen, C.; Yeo, Y.-C. 
1212-Sep-2011Optical and electrical study of core-shell silicon nanowires for solar applicationsLi, Z.; Wang, J.; Singh, N.; Lee, S. 
132010Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI waferZang, H.; Wang, J. ; Lo, G.Q.; Lee, S.J. 
1425-Apr-2008Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stackLi, R.; Sung-Joo, L.E.E. ; Hong, M.-H. ; Chi, D.-Z.; Kwong, D.-L.
15Jun-2006Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrodeLi, R.; Lee, S.J. ; Yao, H.B.; Chi, D.Z.; Yu, M.B.; Kwong, D.L.
16Feb-2004Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate DielectricLee, S. ; Kwong, D.-L.
172007Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregationChi, D.Z.; Yao, H.B.; Liew, S.L.; Tan, C.C.; Chua, C.T.; Chua, K.C.; Li, R.; Lee, S.J. 
1817-Mar-2009Schottky barrier source/drain n-mosfet using ytterbium silicideZHU, SHIYANG ; CHEN, JINGDE ; LEE, SUNGJOO ; LI, MING FU ; SINGH, JAGAR; ZHU, CHUNXIANG ; KWONG, DIM-LEE 
192004Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodesZhu, S. ; Chen, J. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Li, M.F. ; Lee, S.J. ; Zhu, C. ; Chan, D.S.H. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
202006Schottky source/drain MOSFETs on SiGe on insulator with high-K gate dielectric and TaN gate electrodeGao, F.; Li, R.; Chi, D.Z.; Balakumar, S.; Tung, C.-H.; Lee, S.J.