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|Title:||Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack||Authors:||Li, R.
|Issue Date:||25-Apr-2008||Citation:||Li, R., Sung-Joo, L.E.E., Hong, M.-H., Chi, D.-Z., Kwong, D.-L. (2008-04-25). Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack. Japanese Journal of Applied Physics 47 (4 PART 2) : 2548-2550. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.2548||Abstract:||The formation and characteristics of Pt-germanide formed by laser annealing are comprehensively studied. Excellent morphology and sharp interface with Ge are achieved by laser annealed Pt-germanide, along with extremely low hole barrier height of 0.08 eV, showing that Pt-germanide by laser annealing is a promising approach for high-performance conventional self-aligned metal-oxide-semiconductor field-effect transistor application. The feasibility of Pt-germanide Schottky Source/Drain transistor by laser annealing integrated with chemical vapor deposition HfO2/TaN gate stack is also demonstrated. © 2008 The Japan Society of Applied Physics.||Source Title:||Japanese Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82941||ISSN:||00214922||DOI:||10.1143/JJAP.47.2548|
|Appears in Collections:||Staff Publications|
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