Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack

Abstract

The formation and characteristics of Pt-germanide formed by laser annealing are comprehensively studied. Excellent morphology and sharp interface with Ge are achieved by laser annealed Pt-germanide, along with extremely low hole barrier height of 0.08 eV, showing that Pt-germanide by laser annealing is a promising approach for high-performance conventional self-aligned metal-oxide-semiconductor field-effect transistor application. The feasibility of Pt-germanide Schottky Source/Drain transistor by laser annealing integrated with chemical vapor deposition HfO2/TaN gate stack is also demonstrated. © 2008 The Japan Society of Applied Physics.