Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.47.2548
Title: Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack
Authors: Li, R.
Sung-Joo, L.E.E. 
Hong, M.-H. 
Chi, D.-Z.
Kwong, D.-L.
Keywords: Ge MOSFET
Germanide
High-k dielectric
Laser annealing
Schottky
Issue Date: 25-Apr-2008
Citation: Li, R., Sung-Joo, L.E.E., Hong, M.-H., Chi, D.-Z., Kwong, D.-L. (2008-04-25). Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack. Japanese Journal of Applied Physics 47 (4 PART 2) : 2548-2550. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.2548
Abstract: The formation and characteristics of Pt-germanide formed by laser annealing are comprehensively studied. Excellent morphology and sharp interface with Ge are achieved by laser annealed Pt-germanide, along with extremely low hole barrier height of 0.08 eV, showing that Pt-germanide by laser annealing is a promising approach for high-performance conventional self-aligned metal-oxide-semiconductor field-effect transistor application. The feasibility of Pt-germanide Schottky Source/Drain transistor by laser annealing integrated with chemical vapor deposition HfO2/TaN gate stack is also demonstrated. © 2008 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82941
ISSN: 00214922
DOI: 10.1143/JJAP.47.2548
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

3
checked on Jun 14, 2018

WEB OF SCIENCETM
Citations

2
checked on May 15, 2018

Page view(s)

26
checked on May 11, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.