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Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.47.2548
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dc.titlePt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack
dc.contributor.authorLi, R.
dc.contributor.authorSung-Joo, L.E.E.
dc.contributor.authorHong, M.-H.
dc.contributor.authorChi, D.-Z.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:35:20Z
dc.date.available2014-10-07T04:35:20Z
dc.date.issued2008-04-25
dc.identifier.citationLi, R., Sung-Joo, L.E.E., Hong, M.-H., Chi, D.-Z., Kwong, D.-L. (2008-04-25). Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack. Japanese Journal of Applied Physics 47 (4 PART 2) : 2548-2550. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.2548
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82941
dc.description.abstractThe formation and characteristics of Pt-germanide formed by laser annealing are comprehensively studied. Excellent morphology and sharp interface with Ge are achieved by laser annealed Pt-germanide, along with extremely low hole barrier height of 0.08 eV, showing that Pt-germanide by laser annealing is a promising approach for high-performance conventional self-aligned metal-oxide-semiconductor field-effect transistor application. The feasibility of Pt-germanide Schottky Source/Drain transistor by laser annealing integrated with chemical vapor deposition HfO2/TaN gate stack is also demonstrated. © 2008 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.47.2548
dc.sourceScopus
dc.subjectGe MOSFET
dc.subjectGermanide
dc.subjectHigh-k dielectric
dc.subjectLaser annealing
dc.subjectSchottky
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.47.2548
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume47
dc.description.issue4 PART 2
dc.description.page2548-2550
dc.description.codenJAPND
dc.identifier.isiut000255449100045
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