Please use this identifier to cite or link to this item:
|Title:||Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology||Authors:||Li, R.
|Issue Date:||10-May-2006||Citation:||Li, R., Yao, H.B., Lee, S.J., Chi, D.Z., Yu, M.B., Lo, G.Q., Kwong, D.L. (2006-05-10). Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology. Thin Solid Films 504 (1-2) : 28-31. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.033||Abstract:||In this study, we survey Schottky diode property of both p-metal (Ni) germanide and n-metal (Zr, Er and Yb) germanide in contact with Ge (100). Our experimental results demonstrate that Φp values obtained for NiGe/n-Ge is - 0.07 eV, and Φn values for YbGe/p-Ge is 0.139 eV, the lowest hole barrier so far reported. In addition, NiGe Schottky source/drain p-MOSFET with HfO2/TaN gate stack and AlN/SiO2 stacked spacer were fabricated and measured. The drain current at VD = V G - Vth = - 1.5 V is ∼ 4.0 μA/μm of the gate length LG = 8 μm device. The Ion/Ioff ratio is ∼ 103, and sub-threshold swing is 137 mV/dec.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/83945||ISSN:||00406090||DOI:||10.1016/j.tsf.2005.09.033|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 1, 2020
WEB OF SCIENCETM
checked on Mar 24, 2020
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.