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|Title:||Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology||Authors:||Li, R.
|Issue Date:||10-May-2006||Citation:||Li, R., Yao, H.B., Lee, S.J., Chi, D.Z., Yu, M.B., Lo, G.Q., Kwong, D.L. (2006-05-10). Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology. Thin Solid Films 504 (1-2) : 28-31. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.033||Abstract:||In this study, we survey Schottky diode property of both p-metal (Ni) germanide and n-metal (Zr, Er and Yb) germanide in contact with Ge (100). Our experimental results demonstrate that Φp values obtained for NiGe/n-Ge is - 0.07 eV, and Φn values for YbGe/p-Ge is 0.139 eV, the lowest hole barrier so far reported. In addition, NiGe Schottky source/drain p-MOSFET with HfO2/TaN gate stack and AlN/SiO2 stacked spacer were fabricated and measured. The drain current at VD = V G - Vth = - 1.5 V is ∼ 4.0 μA/μm of the gate length LG = 8 μm device. The Ion/Ioff ratio is ∼ 103, and sub-threshold swing is 137 mV/dec.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/83945||ISSN:||00406090||DOI:||10.1016/j.tsf.2005.09.033|
|Appears in Collections:||Staff Publications|
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