Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.033
Title: Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology
Authors: Li, R.
Yao, H.B.
Lee, S.J. 
Chi, D.Z.
Yu, M.B.
Lo, G.Q.
Kwong, D.L.
Keywords: Germanide
Germanium (Ge)
MOSFET
Schottky
Issue Date: 10-May-2006
Citation: Li, R., Yao, H.B., Lee, S.J., Chi, D.Z., Yu, M.B., Lo, G.Q., Kwong, D.L. (2006-05-10). Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology. Thin Solid Films 504 (1-2) : 28-31. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.033
Abstract: In this study, we survey Schottky diode property of both p-metal (Ni) germanide and n-metal (Zr, Er and Yb) germanide in contact with Ge (100). Our experimental results demonstrate that Φp values obtained for NiGe/n-Ge is - 0.07 eV, and Φn values for YbGe/p-Ge is 0.139 eV, the lowest hole barrier so far reported. In addition, NiGe Schottky source/drain p-MOSFET with HfO2/TaN gate stack and AlN/SiO2 stacked spacer were fabricated and measured. The drain current at VD = V G - Vth = - 1.5 V is ∼ 4.0 μA/μm of the gate length LG = 8 μm device. The Ion/Ioff ratio is ∼ 103, and sub-threshold swing is 137 mV/dec.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/83945
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.09.033
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