Please use this identifier to cite or link to this item:
Title: Optical and electrical study of core-shell silicon nanowires for solar applications
Authors: Li, Z.
Wang, J.
Singh, N.
Lee, S. 
Issue Date: 12-Sep-2011
Citation: Li, Z.,Wang, J.,Singh, N.,Lee, S. (2011-09-12). Optical and electrical study of core-shell silicon nanowires for solar applications. Optics Express 19 (19) : A1057-A1066. ScholarBank@NUS Repository.
Abstract: In this work, we report a CMOS comparable fabrication process of core-shell SiNW solar cell from single-crystalline p-type Si(100) test wafers. Optical lithography defined plasma etching was used to form highly ordered vertical SiNW arrays, which display a drastic reduction in optical reflectance over a wide range of wavelengths. BF2 and P ion implantations were employed for producing a sharp and shallow radial p-n junction. Under AM 1.5G illumination, the device demonstrates a short circuit current density (Jsc) of 14.2 mA/cm 2, an open circuit voltage (Voc) of 0.485 V and a fill factor (FF) of 42.9%, giving a power conversion efficiency (PCE) of 2.95%. The Jsc observed is 52% higher than that in the control device with planar Si p-n junction, indicating significant enhancement in carrier generation and collection efficiency from the core-shell structure. Impact of series resistance (Rs) is also studied, highlighting potential improvement of PCE to 4.40% in the absence of Rs. With top contact optimized, PCE could further increase to 6.29%. © 2011 Optical Society of America.
Source Title: Optics Express
ISSN: 10944087
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Mar 29, 2020

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.