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|Title:||Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate||Authors:||Lin, J.Q.
|Issue Date:||2008||Citation:||Lin, J.Q., Lee, S.J., Oh, H.J., Lo, G.Q., Kwong, D.L., Chi, D.Z. (2008). Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate. IEEE Electron Device Letters 29 (9) : 977-980. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001766||Abstract:||A high-performance In0.53Ga0.47As n-channel MOSFET integrated with a HfAlO gate dielectric and a TaN gate electrode was fabricated using a self-aligned process. After HCl cleaning and (NH4)2S treatment, the chemical vapor deposition HfAlO growth on In0.53Ga0.47As exhibits a high-quality interface. The fabricated nMOSFET with a HfAlO gate oxide thickness of 11.7 nm shows a gate leakage current density as low as 2.5 × 10-7A/cm2 at Vg of 1 V. Excellent inversion capacitance was illustrated. Silicon implantation was self-aligned to the gate, and low-temperature activation for source and drain was achieved by rapid thermal annealing at 600 °C for 1 min. The source and drain junction exhibited an excellent rectifying characteristic and high forward current. The result of an In0.53Ga0.47As nMOSFET shows well-performed Id-Vd and Id-Vg characteristics. The record high peak electron mobility of 1560 cm2Vs has been achieved without any correction methods considering interface charge and parasitic resistance. © 2008 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82566||ISSN:||07413106||DOI:||10.1109/LED.2008.2001766|
|Appears in Collections:||Staff Publications|
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