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Chunxiang Zhu

rp01634

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Results 61-80 of 143 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
612005Formation and thermal stability of nickel germanide on germanium substrateZhang, Q.; Nan, W.U.; Osipowicz, T. ; Bera, L.K.; Zhu, C. 
2Dec-2003Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETsYu, D.S.; Wu, C.H.; Huang, C.H.; Chin, A.; Chen, W.J.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
3May-2003Fully silicided NiSi gate on La2O3 MOSFETsLin, C.Y.; Ma, M.W.; Chin, A.; Yeo, Y.C. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
4Aug-2004Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobilityYu, D.S.; Chiang, K.C.; Cheng, C.F.; Chin, A.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
5Jun-2006Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivationWu, N.; Zhang, Q.; Chan, D.S.H. ; Balasubramanian, N.; Zhu, C. 
62006Germanium incorporation in Hf O2 dielectric on germanium substrateZhang, Q.; Wu, N.; Lai, D.M.Y.; Nikolai, Y.; Bera, L.K.; Zhu, C. 
724-Oct-2005Germanium n+/p junction formation by laser thermal processHuang, J.; Wu, N.; Zhang, Q.; Zhu, C. ; Tay, A.A.O. ; Chen, G. ; Hong, M. 
8Feb-2005Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gateZhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
92006High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3Ding, S.-J.; Zhang, M.; Chen, W.; Zhang, D.W.; Wang, L.-K.; Wang, X.P.; Zhu, C. ; Li, M.-F. 
102011High performance metal-insulator-metal capacitors with Er2O 3 on ALD SiO2 for RF applicationsPhung, T.H.; Srinivasan, D.K.; Steinmann, P.; Wise, R.; Yu, M.-B.; Yeo, Y.-C. ; Zhu, C. 
11Feb-2006High work function IrxSi gates on HfAlON p-MOSFETsWu, C.H.; Yu, D.S.; Chin, A.; Wang, S.J.; Li, M.-F. ; Zhu, C. ; Hung, B.F.; McAlister, S.P.
122008High- k gate stack on germanium substrate with fluorine incorporationXie, R.; Yu, M.; Lai, M.Y.; Chan, L.; Zhu, C. 
13May-2003High-density MIM capacitors using AlTaOx dielectricsYang, M.Y.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
14Dec-2003High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate DielectricsDing, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
15Apr-2007High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gateWu, C.H.; Hung, B.F.; Chin, A.; Wang, S.J.; Wang, X.P.; Li, M.-F. ; Zhu, C. ; Yen, F.Y.; Hou, Y.T.; Jin, Y.; Tao, H.J.; Chen, S.C.; Liang, M.S.
162007Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instabilityYu, X.; Zhu, C. ; Yu, M.
1720-Aug-2008Improvement in the hole collection of polymer solar cells by utilizing gold nanoparticle buffer layerTong, S.W. ; Zhang, C.F. ; Jiang, C.Y.; Liu, G. ; Ling, Q.D. ; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
18Aug-2004Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectricKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Zhu, C. ; Yu, M.B.; Narayanan, B.; Chin, A.; Kwong, D.-L.
19Dec-2004Improvements on surface carrier mobility and electrical stability of MOSFETs using HfTaO gate dielectricYu, X.; Zhu, C. ; Yu, M.; Kwong, D.-L.
2010-May-2013In situ synthesis and nonvolatile rewritable-memory effect of polyaniline-functionalized graphene oxideZhang, B.; Chen, Y.; Ren, Y.; Xu, L.-Q.; Liu, G. ; Kang, E.-T. ; Wang, C.; Zhu, C.-X. ; Neoh, K.-G.