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Chunxiang Zhu

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Refined By:
Author:  Zhu, C.
Department:  COLLEGE OF DESIGN AND ENGINEERING

Results 181-200 of 231 (Search time: 0.009 seconds).

Issue DateTitleAuthor(s)
1812003Robust HfN Metal Gate Electrode for Advanced MOS Devices ApplicationYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C.X. ; Kwong, D.-L.; Tung, C.H.; Bera, K.L.; Leo, C.J.
217-Mar-2009Schottky barrier source/drain n-mosfet using ytterbium silicideZHU, SHIYANG ; CHEN, JINGDE ; LEE, SUNGJOO ; LI, MING FU ; SINGH, JAGAR; ZHU, CHUNXIANG ; KWONG, DIM-LEE 
32004Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodesZhu, S. ; Chen, J. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Li, M.F. ; Lee, S.J. ; Zhu, C. ; Chan, D.S.H. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
4May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
52004Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devicesLi, M.F. ; Yu, H.Y. ; Hou, Y.T. ; Kang, J.F. ; Wang, X.P.; Shen, C.; Ren, C.; Yeo, Y.C. ; Zhu, C.X. ; Chan, D.S.H. ; Chin, A.; Kwong, D.L.
6May-2008Si-nanowire based gate-all-around nonvolatile SONOS memory cellFu, J.; Singh, N.; Buddharaju, K.D.; Teo, S.H.G.; Shen, C.; Jiang, Y.; Zhu, C.X. ; Yu, M.B.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.L.; Gnani, E.; Baccarani, G.
72008Si-nanowire TAHOS TaN/AI2O3/HfO2/SiO 2/Si nonvolatile memory cellFu, J.; Singh, N.; Yang, B.; Zhu, C.X. ; Lo, G.Q.; Kwong, D.L.
82008Simple tandem organic photovoltaic cells for improved energy conversion efficiencyZhang, C. ; Tong, S.W. ; Jiang, C.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
92008Simple tandem organic photovoltaic cells for improved energy conversion efficiencyZhang, C. ; Tong, S.W. ; Jiang, C.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
102015Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metalsChang Jingjing; Lin Zhenhua ; Lin Ming; Zhu Chunxiang ; Zhang Jie; Wu Jishan 
1124-Jul-2013Solution-processed lif-doped ZnO films for high performance low temperature field effect transistors and inverted solar cellsChang, J.; Lin, Z.; Zhu, C. ; Chi, C. ; Zhang, J.; Wu, J. 
12Dec-2011Some issues in advanced CMOS gate stack performance and reliabilityLi, M.-F. ; Wang, X.P.; Shen, C.; Yang, J.J.; Chen, J.D. ; Yu, H.Y.; Zhu, C. ; Huang, D.
131-Dec-2008Spatially well-defined binary brushes of poly(ethylene glycol)s for micropatterning of active proteins on anti-fouling surfacesXu, F.J. ; Li, H.Z.; Li, J. ; Teo, Y.H.E. ; Zhu, C.X. ; Kang, E.T. ; Neoh, K.G. 
142007Spectroscopic ellipsometry investigation of nickel germanide formationZhang, Q.; Han, C.W.; Zhu, C. 
152005Strain-induced very low noise RF MOSFETs on flexible plastic substrateKao, H.L.; Chin, A. ; Hung, B.F.; Lai, J.M.; Lee, C.F.; Li, M.-F. ; Samudra, G.S. ; Zhu, C. ; Xia, Z.L.; Liu, X.Y.; Kang, J.F.
163-Apr-2006Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectricHuang, J.; Wu, N.; Zhang, Q.; Zhu, C. ; Li, M.F. ; Tay, A.A.O. ; Cheng, Z.-Y.; Leitz, C.W.; Lochtefeld, A.
1712-Jul-2006Synthesis and dynamic random access memory behavior of a functional polyimideLing, Q.-D. ; Chang, F.-C.; Song, Y.; Zhu, C.-X. ; Liaw, D.-J.; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
182006Synthesis and memory properties of a conjugated copolymer of fluorene and benzoate with chelated europium complexSong, Y.; Tan, Y.P.; Teo, E.Y.H. ; Zhu, C. ; Chan, D.S.H. ; Ling, Q.D. ; Neoh, K.G. ; Kang, E.T. 
1915-Sep-2004The electrical and material properties of HfO xN y dielectric on germanium substrateZhang, Q.; Wu, N.; Zhu, C. 
20Aug-2007The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodesYu, X.; Yu, M.; Zhu, C.