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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 61-80 of 300 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
611999Comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV methodNg, K.H.; Jie, B.B.; He, Y.D. ; Chim, W.K. ; Li, M.F. ; Lo, K.F.
621998Comparison of the optical gain of wurtzite GaN/AlGaN quantum well lasers grown on the (0001)- and (101̄0) oriented substratesChong, T.C. ; Yeo, Y.C. ; Li, M.F. 
32008Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniquesLiu, Z.Y.; Huang, D.; Liu, W.J.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Li, M.-F. 
418-Oct-1999Conduction mechanism under quasibreakdown of ultrathin gate oxideHe, Y.D. ; Guan, H.; Li, M.F. ; Cho, B.J. ; Dong, Z.
51999Confinement and electron-phonon interactions of the E1 exciton in self-organized Ge quantum dotsKwok, S.H.; Yu, P.Y.; Tung, C.H.; Zhang, Y.H.; Li, M.F. ; Peng, C.S.; Zhou, J.M.
61997Constant offset sample-and-hold CMOS switching circuitYong, Y.K.; Li, M.F. ; Lim, Y.C. ; Yep, S.Y.
715-Aug-1999Correlation between charge pumping method and direct-current current voltage method in p-type metal-oxide-semiconductor field-effect transistorsJie, B.-B.; Ng, K.-H.; Li, M.-F. ; Lo, K.-F.
82000Correlation between gate induced drain leakage and plasma induced interface trapsSiguang, M.; Yaohui, Z.; Li, M.F. ; Li, W.; Wang, J.L.F.; Yen, A.C.; Sheng, G.T.T.
98-Jul-2002Correlation between interface traps and gate oxide leakage current in the direct tunneling regimeLoh, W.Y. ; Cho, B.J. ; Li, M.F. 
10Jul-1999DC voltage-voltage method to measure the interface traps in sub-micron MOSTsJie, B.B.; Li, M.F. ; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
111997Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructuresDu, A.Y.; Li, M.F. ; Chong, T.C. ; Teo, K.L. ; Lau, W.S. 
122006Demonstration of a new approach towards 0.25V Low-Vt CMOS using Ni-based FUSIYu, H.Y.; Kittl, J.A.; Lauwers, A.; Singanamalla, R.; Demeurisse, C.; Kubicek, S.; Augendre, E.; Veloso, A.; Brus, S.; Vrancken, C.; Hoffmann, T.; Mertens, S.; Onsia, B.; Verbeeck, R.; Demand, M.; Rothchild, A.; Froment, B.; Van Dal, M.; De Meyer, K.; Li, M.F. ; Chen, J.D. ; Jurczak, M.; Absil, P.P.; Biesemans, S.
131-Mar-2003Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectricJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Wu, N.; Yu, H. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.; Balasubramanian, N.
14Aug-2010Diagram representations of charge pumping processes in CMOS transistorsXinyun, H.; Guangfan, J.; Chen, S.; Wei, C.; Daming, H.; Mingfu, L. 
1514-Oct-2002Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayersXu, S.J.; Liu, W.; Li, M.F. 
16May-2002Direct tunneling currents through gate dielectrics in deep submicron MOSFETsHou, Y. ; Li, M. ; Jin, Y.
171-Jan-2002Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devicesHou, Y.T. ; Li, M.F. ; Jin, Y.; Lai, W.H.
181997Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structureJie, B.B.; Li, M.F. ; Lou, C.L.; Lo, K.F.; Chim, W.K. ; Chan, D.S.H. 
194-Nov-1996Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructuresDu, A.Y.; Li, M.F. ; Chong, T.C. ; Teo, K.L. ; Lau, W.S. ; Zhang, Z.
201997Dislocations and traps in MBE grown lattice mismatched p-InGaAs/GaAs layers on GaAs substratesDu, A.Y.; Li, M.F. ; Chong, T.C. ; Zhang, Z.