Please use this identifier to cite or link to this item:
|Title:||Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure||Authors:||Jie, B.B.
|Issue Date:||1997||Citation:||Jie, B.B.,Li, M.F.,Lou, C.L.,Lo, K.F.,Chim, W.K.,Chan, D.S.H. (1997). Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 176-181. ScholarBank@NUS Repository.||Abstract:||A direct-current current-voltage (DCIV) technique for the measurement of interface traps and oxide charges in LDD pMOSFETs with n-well in p-substrate is demonstrated. The interface trap densities are monitored using the bulk current of the MOS transistor. The DCIV results for pMOSFETs after substrate hot carrier injection and channel hot carrier injection are presented and analyzed. There are two peaks in the DCIV spectrum after channel hot carrier injection, corresponding to hot-carrier-generated interface traps located in the channel region and the lightly-doped drain (LDD) region respectively. The stress-induced oxide charge results in the shifts of two peaks.||Source Title:||Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/72582|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 19, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.