Please use this identifier to cite or link to this item:
|Title:||Confinement and electron-phonon interactions of the E1 exciton in self-organized Ge quantum dots||Authors:||Kwok, S.H.
|Issue Date:||1999||Citation:||Kwok, S.H.,Yu, P.Y.,Tung, C.H.,Zhang, Y.H.,Li, M.F.,Peng, C.S.,Zhou, J.M. (1999). Confinement and electron-phonon interactions of the E1 exciton in self-organized Ge quantum dots. Physical Review B - Condensed Matter and Materials Physics 59 (7) : 4980-4984. ScholarBank@NUS Repository.||Abstract:||We have utilized resonant Raman scattering to investigate the phonon modes of self-organized Ge quantum dots grown by molecular-beam epitaxy. Both Ge-Ge and Si-Ge phonon modes are found to exhibit strong enhancements at the E1 exciton. The strain in the quantum dots deduced from the phonon energies is consistent with the results of high-resolution transmission electron microscopy. An upper bound on the confinement energy of the E1 exciton in quantum dots was deduced. The enhancement strength in the Si-Ge phonon indicates strong interaction between this mode and the E1 exciton of the Ge dots. © 1999 The American Physical Society.||Source Title:||Physical Review B - Condensed Matter and Materials Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/80332||ISSN:||01631829|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 28, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.