Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72526
Title: Comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV method
Authors: Ng, K.H.
Jie, B.B.
He, Y.D. 
Chim, W.K. 
Li, M.F. 
Lo, K.F.
Issue Date: 1999
Citation: Ng, K.H.,Jie, B.B.,He, Y.D.,Chim, W.K.,Li, M.F.,Lo, K.F. (1999). Comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV method. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 140-144. ScholarBank@NUS Repository.
Abstract: We report on the different behaviours of interface trap generation caused by Fowler-Nordheim (F-N) electron injection and by hot-hole injection using the direct current current-voltage (DCIV) method. The hole-electron ratio of the gate current under hot-hole injection conditions is quantified. The study shows that the efficiency of hole-induced interface trap generation is about 150 times that of electron-induced interface trap generation. Furthermore, interface trap generation by both hole and electron injections obey a power-law relation with injected fluence. The hot-hole injection is observed to have a smaller power exponent than F-N electron injection.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/72526
Appears in Collections:Staff Publications

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