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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Author:  Lee, R.T.P.

Results 1-20 of 38 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
120085 nm gate length nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation techniqueLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
2Feb-2008A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFETTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
32007A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistorsTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
42008A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-channel transistorsWong, H.-S.; Koh, A.T.-Y.; Chin, H.-C.; Lee, R.T.-P. ; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
5Apr-2008Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widthsLee, R.T.-P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Koh, A.T.-Y.; Zhu, M. ; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
62008Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayersLim, A.E.-J.; Lee, R.T.P. ; Wang, X.P.; Hwang, W.S.; Tung, C.-H.; Lai, D.M.Y.; Samudra, G. ; Kwong, D.-L.; Yeo, Y.-C. 
72006Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancementLiow, T.-Y.; Tan, K.-M.; Chin, H.-C.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
8Sep-2006Drive-current enhancement in FinFETs using gate-induced stressTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
925-Apr-2008Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reductionLim, A.E.-J.; Lee, R.T.P. ; Koh, A.T.Y.; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
102007Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G. ; Kwong, D.-L. ; Yeo, Y.-C. 
112007Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
122007Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressorsLee, R.T.P. ; Yang, L.-T.; Ang, K.-W.; Liow, T.-Y.; Tan, K.-M.; Wong, A.S.-W.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
13Aug-2008Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interfaceLim, A.E.-J.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
14Nov-2007N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layerLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
15Feb-2007N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicideLee, R.T.P. ; Lim, A.E.-J.; Tan, K.-M.; Liow, T.-Y.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
162008Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistorsKoh, A.T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Lai, D.M.-Y.; Chi, D.-Z.; Hoe, K.-M.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
17Jan-2008Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drainLee, R.T.P. ; Yang, L.-T.; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ang, K.-W.; Lai, D.M.Y.; Hoe, K.M.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
182008Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performanceLee, R.T.-P. ; Koh, A.T.-Y.; Fang, W.-W.; Tan, K.-M.; Lim, A.E.-J.; Liow, T.-Y.; Chow, S.-Y.; Yong, A.M.; Hoong, S.W.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
192007Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETsLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ho, C.-S.; Hoe, K.-M.; Lai, M.Y.; Osipowicz, T. ; Lo, G.-Q.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
2025-Apr-2008Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistorTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C.