ELECTRICAL AND COMPUTER ENGINEERING

Organization name
ELECTRICAL AND COMPUTER ENGINEERING


Results 561-580 of 15308 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
5618-Apr-2021Twistronics for photons: OpinionHu, Guangwei ; Qiu, Cheng-Wei ; Alù, A.
5622007Turbo- and LDPC-coded MIMO-OFDM systems: A comparative studyTan, B.; Xin, Y. ; Mujtaba, S.A.; Zhang, T.
5632009Turbo processing for joint channel estimation, synchronization, and decoding in coded MIMO-OFDM systemsLe-Ngoc, T.; Nguyen-Le, H.; Ko, C.C. 
5642008Turbo joint decoding, synchronization and channel estimation for coded MIMO-OFDM systemsNguyen-Le, H.; Le-Ngoc, T.; Chi, C.K. 
5652005Turbo differential space-time block codes with iterative demodulation and decodingNallanathan, A. ; Yan, L.P.
5662001Turbo coding for decision feedback equalized magnetic recording channelsZhao, F.; Mathew, G. ; Farhang-Boroujeny, B. 
5672009Tunneling time of spin particle determined by the spin precession method in the Dresselhaus spin orbit semiconductor systemWan, F.; Jalil, M.B.A. ; Tan, S.G.
568Sep-2002Tunneling magnetotransport in nanogranular-in-gap structureJalil, M.B.A. 
5692002Tunneling magnetotransport in nano-granular-in-gap structureJalil, M.B.A. 
5702009Tunneling field-effect transistor: Effect of strain and temperature on tunneling currentGuo, P.-F.; Yang, L.-T.; Yang, Y.; Fan, L.; Han, G.-Q. ; Samudra, G.S. ; Yeo, Y.-C. 
571Jul-2010Tunneling field-effect transistor: Capacitance components and modelingYang, Y.; Tong, X.; Yang, L.-T.; Guo, P.-F.; Fan, L.; Yeo, Y.-C. 
5727-Mar-2013Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junctionGuo, P.; Yang, Y.; Cheng, Y.; Han, G. ; Pan, J.; Ivana; Zhang, Z.; Hu, H.; Shen, Z.X.; Chia, C.K.; Yeo, Y.-C. 
5732012Tunneling field-effect transistor (TFET) with novel Ge/In 0.53Ga0.47As tunneling junctionGuo, P.; Yang, Y.; Cheng, Y.; Han, G. ; Chia, C.K.; Yeo, Y.-C. 
57420-Dec-2010Tunneling characteristics of grapheneShin, Y.J.; Kalon, G. ; Son, J.; Kwon, J.H.; Niu, J.; Bhatia, C.S. ; Liang, G. ; Yang, H. 
57512-Sep-2012Tunneling behavior of bismuth telluride nanoplates in electrical transportEginligil, M.; Zhang, W.; Kalitsov, A.; Lu, X. ; Yang, H. 
5767-Jul-2013Tunnel magnetoresistance effect and interface study in magnetic tunnel junctions using epitaxial Fe2CrSi Heusler alloy electrodeWang, Y.-P.; Han, G.-C.; Lu, H.; Qiu, J.; Yap, Q.-J.; Ji, R.; Teo, K.-L. 
5771-Jan-2015Tuning the threshold voltage of MoS2 field-effect transistors via surface treatmentLeong, Wei Sun ; Li, Yida ; Luo, Xin ; Nai, Chang Tai ; Quek, Su Ying ; Thong, John TL 
578Jul-2010Tuning the shape and thermoelectric property of PbTe nanocrystals by bismuth dopingZhang, Q. ; Sun, T.; Cao, F.; Li, M.; Hong, M. ; Yuan, J.; Yan, Q.; Hng, H.H.; Wu, N.; Liu, X. 
5792008Tuning the Schottky barrier height of nickel silicide on p -silicon by aluminum segregationSinha, M.; Chor, E.F. ; Yeo, Y.-C. 
58023-Dec-2013Tuning the Interface Conductivity of LaAlO3/SrTiO3 Using Ion Beams: Implications for PatterningMathew, S. ; Annadi, A.; Chan, T.K. ; Asmara, T.C.; Zhan, D.; Wang, X.R.; Azimi, S.; Shen, Z.; Rusydi, A. ; Ariando; Breese, M.B.H. ; Venkatesan, T.