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Title: Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junction
Authors: Guo, P.
Yang, Y.
Cheng, Y.
Han, G. 
Pan, J.
Zhang, Z.
Hu, H.
Shen, Z.X.
Chia, C.K.
Yeo, Y.-C. 
Issue Date: 7-Mar-2013
Citation: Guo, P., Yang, Y., Cheng, Y., Han, G., Pan, J., Ivana, Zhang, Z., Hu, H., Shen, Z.X., Chia, C.K., Yeo, Y.-C. (2013-03-07). Tunneling field-effect transistor with Ge/In0.53Ga 0.47As heterostructure as tunneling junction. Journal of Applied Physics 113 (9) : -. ScholarBank@NUS Repository.
Abstract: High quality epitaxial germanium (Ge) was successfully grown on In 0.53Ga0.47As substrate using a metal-organic chemical vapor deposition tool. The valence band offset ΔEV between the Ge layer and In0.53Ga0.47As determined by high-resolution x-ray photoelectron spectroscopy was found to be 0.5 ± 0.1 eV, suggesting the Ge/In0.53Ga0.47As heterojunction has a staggered band alignment at the interface. This makes the Ge/In0.53Ga 0.47As heterojunction a promising tunneling junction for application in tunneling field-effect transistor (TFET). Lateral TFET with in situ doped p+ Ge-source In0.53Ga0.47As-channel using a gate-last process was demonstrated for the first time. The temperature dependence of the TFET transfer characteristics was investigated. The TFET with gate length (LG) of 8 μm exhibits an on-state tunneling current (ION) of 380 nA/μm at VGS = VDS = 2 V. The subthreshold swing (S) at the steepest part of the transfer characteristics of this device is ∼177 mV/decade. It was found that the off-state leakage current (IOFF) was determined by the Shockley-Read-Hall generation-recombination current in the Ge-source region. The temperature dependence of ION was mainly due to the change of the band gap with temperature. Furthermore, S was found to be limited by the trap-assisted tunneling at the Ge/In0.53Ga0.47As tunneling junction. The low ION and poor S can be enhanced by improving the source/channel profile and optimizing Ge epitaxial growth process. © 2013 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.4794010
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