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https://doi.org/10.1109/LED.2010.2047240
Title: | Tunneling field-effect transistor: Capacitance components and modeling | Authors: | Yang, Y. Tong, X. Yang, L.-T. Guo, P.-F. Fan, L. Yeo, Y.-C. |
Keywords: | Modeling parasitic capacitance tunneling field-effect transistor (TFET) |
Issue Date: | Jul-2010 | Citation: | Yang, Y., Tong, X., Yang, L.-T., Guo, P.-F., Fan, L., Yeo, Y.-C. (2010-07). Tunneling field-effect transistor: Capacitance components and modeling. IEEE Electron Device Letters 31 (7) : 752-754. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2047240 | Abstract: | We report a numerical simulation study of gate capacitance components in a tunneling field-effect transistor (TFET), showing key differences in the partitioning of gate capacitance between the source and drain as compared with a MOSFET. A compact model for TFET capacitance components, including parasitic and inversion capacitances, was built and calibrated with computer-aided design data. This model should be useful for further investigation of performance of circuits containing TFETs. The dependence of gatedrain capacitance C gd on drain design and gate length was further investigated for reduction of switching delay in TFETs. © 2010 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/83231 | ISSN: | 07413106 | DOI: | 10.1109/LED.2010.2047240 |
Appears in Collections: | Staff Publications |
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