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|Title:||Tunneling field-effect transistor: Capacitance components and modeling||Authors:||Yang, Y.
tunneling field-effect transistor (TFET)
|Issue Date:||Jul-2010||Citation:||Yang, Y., Tong, X., Yang, L.-T., Guo, P.-F., Fan, L., Yeo, Y.-C. (2010-07). Tunneling field-effect transistor: Capacitance components and modeling. IEEE Electron Device Letters 31 (7) : 752-754. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2047240||Abstract:||We report a numerical simulation study of gate capacitance components in a tunneling field-effect transistor (TFET), showing key differences in the partitioning of gate capacitance between the source and drain as compared with a MOSFET. A compact model for TFET capacitance components, including parasitic and inversion capacitances, was built and calibrated with computer-aided design data. This model should be useful for further investigation of performance of circuits containing TFETs. The dependence of gatedrain capacitance C gd on drain design and gate length was further investigated for reduction of switching delay in TFETs. © 2010 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83231||ISSN:||07413106||DOI:||10.1109/LED.2010.2047240|
|Appears in Collections:||Staff Publications|
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