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Title: Tunneling field-effect transistor: Capacitance components and modeling
Authors: Yang, Y.
Tong, X.
Yang, L.-T.
Guo, P.-F.
Fan, L.
Yeo, Y.-C. 
Keywords: Modeling
parasitic capacitance
tunneling field-effect transistor (TFET)
Issue Date: Jul-2010
Citation: Yang, Y., Tong, X., Yang, L.-T., Guo, P.-F., Fan, L., Yeo, Y.-C. (2010-07). Tunneling field-effect transistor: Capacitance components and modeling. IEEE Electron Device Letters 31 (7) : 752-754. ScholarBank@NUS Repository.
Abstract: We report a numerical simulation study of gate capacitance components in a tunneling field-effect transistor (TFET), showing key differences in the partitioning of gate capacitance between the source and drain as compared with a MOSFET. A compact model for TFET capacitance components, including parasitic and inversion capacitances, was built and calibrated with computer-aided design data. This model should be useful for further investigation of performance of circuits containing TFETs. The dependence of gatedrain capacitance C gd on drain design and gate length was further investigated for reduction of switching delay in TFETs. © 2010 IEEE.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2010.2047240
Appears in Collections:Staff Publications

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