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Title: Tuning the Interface Conductivity of LaAlO3/SrTiO3 Using Ion Beams: Implications for Patterning
Authors: Mathew, S. 
Annadi, A.
Chan, T.K. 
Asmara, T.C.
Zhan, D.
Wang, X.R.
Azimi, S.
Shen, Z.
Rusydi, A. 
Breese, M.B.H. 
Venkatesan, T. 
Keywords: heterointerface
interface conductivity
interface patterning
ion irradiation
point defects
spectroscopic ellipsometry
Issue Date: 23-Dec-2013
Citation: Mathew, S., Annadi, A., Chan, T.K., Asmara, T.C., Zhan, D., Wang, X.R., Azimi, S., Shen, Z., Rusydi, A., Ariando, Breese, M.B.H., Venkatesan, T. (2013-12-23). Tuning the Interface Conductivity of LaAlO3/SrTiO3 Using Ion Beams: Implications for Patterning. ACS Nano 7 (12) : 10572-10581. ScholarBank@NUS Repository.
Abstract: Patterning of the two-dimensional electron gas formed at the interface of two band insulators such as LaAlO3/SrTiO3 is one of the key challenges in oxide electronics. The use of energetic ion beam exposure for engineering the interface conductivity has been investigated. We found that this method can be utilized to manipulate the conductivity at the LaAlO 3/SrTiO3 interface by carrier localization, arising from the defects created by the ion beam exposure, eventually producing an insulating ground state. This process of ion-beam-induced defect creation results in structural changes in SrTiO3 as revealed by the appearance of first-order polar TO2 and TO4 vibrational modes which are associated with Ti-O bonds in the Raman spectra of the irradiated samples. Furthermore, significant observation drawn from the magnetotransport measurements is that the irradiated (unirradiated) samples showed a negative (positive) magnetoresistance along with simultaneous emergence of first-order (only second order) Raman modes. In spectroscopic ellipsometry measurements, the optical conductivity features of the irradiated interface are broadened because of the localization effects, along with a decrease of spectral weight from 4.2 to 5.4 eV. These experiments allow us to conclude that the interface ground state (metallic/insulating) at the LaAlO3/SrTiO3 can be controlled by tailoring the defect structure of the SrTiO3 with ion beam exposure. A resist-free, single-step direct patterning of a conducting LaAlO3/SrTiO3 interface has been demonstrated. Patterns with a spatial resolution of 5 μm have been fabricated using a stencil mask, while nanometer scale patterns may be possible with direct focused ion beam writing. © 2013 American Chemical Society.
Source Title: ACS Nano
ISSN: 19360851
DOI: 10.1021/nn4028135
Appears in Collections:Staff Publications

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