Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn4028135
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dc.titleTuning the Interface Conductivity of LaAlO3/SrTiO3 Using Ion Beams: Implications for Patterning
dc.contributor.authorMathew, S.
dc.contributor.authorAnnadi, A.
dc.contributor.authorChan, T.K.
dc.contributor.authorAsmara, T.C.
dc.contributor.authorZhan, D.
dc.contributor.authorWang, X.R.
dc.contributor.authorAzimi, S.
dc.contributor.authorShen, Z.
dc.contributor.authorRusydi, A.
dc.contributor.authorAriando
dc.contributor.authorBreese, M.B.H.
dc.contributor.authorVenkatesan, T.
dc.date.accessioned2014-10-07T04:38:47Z
dc.date.available2014-10-07T04:38:47Z
dc.date.issued2013-12-23
dc.identifier.citationMathew, S., Annadi, A., Chan, T.K., Asmara, T.C., Zhan, D., Wang, X.R., Azimi, S., Shen, Z., Rusydi, A., Ariando, Breese, M.B.H., Venkatesan, T. (2013-12-23). Tuning the Interface Conductivity of LaAlO3/SrTiO3 Using Ion Beams: Implications for Patterning. ACS Nano 7 (12) : 10572-10581. ScholarBank@NUS Repository. https://doi.org/10.1021/nn4028135
dc.identifier.issn19360851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83226
dc.description.abstractPatterning of the two-dimensional electron gas formed at the interface of two band insulators such as LaAlO3/SrTiO3 is one of the key challenges in oxide electronics. The use of energetic ion beam exposure for engineering the interface conductivity has been investigated. We found that this method can be utilized to manipulate the conductivity at the LaAlO 3/SrTiO3 interface by carrier localization, arising from the defects created by the ion beam exposure, eventually producing an insulating ground state. This process of ion-beam-induced defect creation results in structural changes in SrTiO3 as revealed by the appearance of first-order polar TO2 and TO4 vibrational modes which are associated with Ti-O bonds in the Raman spectra of the irradiated samples. Furthermore, significant observation drawn from the magnetotransport measurements is that the irradiated (unirradiated) samples showed a negative (positive) magnetoresistance along with simultaneous emergence of first-order (only second order) Raman modes. In spectroscopic ellipsometry measurements, the optical conductivity features of the irradiated interface are broadened because of the localization effects, along with a decrease of spectral weight from 4.2 to 5.4 eV. These experiments allow us to conclude that the interface ground state (metallic/insulating) at the LaAlO3/SrTiO3 can be controlled by tailoring the defect structure of the SrTiO3 with ion beam exposure. A resist-free, single-step direct patterning of a conducting LaAlO3/SrTiO3 interface has been demonstrated. Patterns with a spatial resolution of 5 μm have been fabricated using a stencil mask, while nanometer scale patterns may be possible with direct focused ion beam writing. © 2013 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn4028135
dc.sourceScopus
dc.subjectheterointerface
dc.subjectinterface conductivity
dc.subjectinterface patterning
dc.subjection irradiation
dc.subjectlocalization
dc.subjectpoint defects
dc.subjectspectroscopic ellipsometry
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/nn4028135
dc.description.sourcetitleACS Nano
dc.description.volume7
dc.description.issue12
dc.description.page10572-10581
dc.identifier.isiut000329137100016
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