Please use this identifier to cite or link to this item: https://doi.org/10.1039/c5nr00253b
Title: Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment
Authors: Leong, Wei Sun 
Li, Yida 
Luo, Xin 
Nai, Chang Tai 
Quek, Su Ying 
Thong, John TL 
Keywords: Science & Technology
Physical Sciences
Technology
Chemistry, Multidisciplinary
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Chemistry
Science & Technology - Other Topics
Materials Science
Physics
CONTACT-RESISTANCE
LAYER MOS2
DEFECT
STATES
ENHANCEMENT
TRANSITION
TRANSPORT
DEVICES
Issue Date: 1-Jan-2015
Publisher: ROYAL SOCIETY OF CHEMISTRY
Citation: Leong, Wei Sun, Li, Yida, Luo, Xin, Nai, Chang Tai, Quek, Su Ying, Thong, John TL (2015-01-01). Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment. NANOSCALE 7 (24) : 10823-10831. ScholarBank@NUS Repository. https://doi.org/10.1039/c5nr00253b
Abstract: © The Royal Society of Chemistry 2015. Controlling the threshold voltage (Vth) of a field-effect transistor is important for realizing robust logic circuits. Here, we report a facile approach to achieve bidirectional Vth tuning of molybdenum disulfide (MoS2) field-effect transistors. By increasing and decreasing the amount of sulfur vacancies in the MoS2 surface, the Vth of MoS2 transistors can be left- and right-shifted, respectively. Transistors fabricated on perfect MoS2 flakes are found to exhibit a two-fold enhancement in mobility and a very positive Vth (18.5 ± 7.5 V). More importantly, our elegant hydrogen treatment is able to tune the large Vth to a small value (∼0 V) without any performance degradation simply by reducing the atomic ratio of S-Mo slightly; in other words, it creates a certain amount of sulfur vacancies in the MoS2 surface, which generate defect states in the band gap of MoS2 that mediates conduction of a MoS2 transistor in the subthreshold regime. First-principles calculations further indicate that the defect band's edge and width can be tuned according to the vacancy density. This work not only demonstrates for the first time the ease of tuning the Vth of MoS2 transistors, but also offers a process technology solution that is critical for further development of MoS2 as a mainstream electronic material. This journal is
Source Title: NANOSCALE
URI: https://scholarbank.nus.edu.sg/handle/10635/170918
ISSN: 20403364
20403372
DOI: 10.1039/c5nr00253b
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