Tunneling characteristics of graphene

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3527979

Title:	Tunneling characteristics of graphene
Authors:	Shin, Y.J. Kalon, G. Son, J. Kwon, J.H. Niu, J. Bhatia, C.S. Liang, G. Yang, H.
Issue Date:	20-Dec-2010
Citation:	Shin, Y.J., Kalon, G., Son, J., Kwon, J.H., Niu, J., Bhatia, C.S., Liang, G., Yang, H. (2010-12-20). Tunneling characteristics of graphene. Applied Physics Letters 97 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3527979
Abstract:	Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E -field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of nonuniform disordered graphene is confirmed. A memory switching effect of 100 000% ON/OFF ratio is demonstrated in the tunneling regime, which can be employed in various applications. © 2010 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/57725
ISSN:	00036951
DOI:	10.1063/1.3527979
Appears in Collections:	Staff Publications

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