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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3527979
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dc.titleTunneling characteristics of graphene
dc.contributor.authorShin, Y.J.
dc.contributor.authorKalon, G.
dc.contributor.authorSon, J.
dc.contributor.authorKwon, J.H.
dc.contributor.authorNiu, J.
dc.contributor.authorBhatia, C.S.
dc.contributor.authorLiang, G.
dc.contributor.authorYang, H.
dc.date.accessioned2014-06-17T03:09:28Z
dc.date.available2014-06-17T03:09:28Z
dc.date.issued2010-12-20
dc.identifier.citationShin, Y.J., Kalon, G., Son, J., Kwon, J.H., Niu, J., Bhatia, C.S., Liang, G., Yang, H. (2010-12-20). Tunneling characteristics of graphene. Applied Physics Letters 97 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3527979
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57725
dc.description.abstractNegative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E -field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of nonuniform disordered graphene is confirmed. A memory switching effect of 100 000% ON/OFF ratio is demonstrated in the tunneling regime, which can be employed in various applications. © 2010 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3527979
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3527979
dc.description.sourcetitleApplied Physics Letters
dc.description.volume97
dc.description.issue25
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000285764300035
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