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|Title:||Tunneling characteristics of graphene|
|Citation:||Shin, Y.J., Kalon, G., Son, J., Kwon, J.H., Niu, J., Bhatia, C.S., Liang, G., Yang, H. (2010-12-20). Tunneling characteristics of graphene. Applied Physics Letters 97 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3527979|
|Abstract:||Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E -field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of nonuniform disordered graphene is confirmed. A memory switching effect of 100 000% ON/OFF ratio is demonstrated in the tunneling regime, which can be employed in various applications. © 2010 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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