Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3527979
Title: Tunneling characteristics of graphene
Authors: Shin, Y.J.
Kalon, G. 
Son, J.
Kwon, J.H.
Niu, J.
Bhatia, C.S. 
Liang, G. 
Yang, H. 
Issue Date: 20-Dec-2010
Source: Shin, Y.J., Kalon, G., Son, J., Kwon, J.H., Niu, J., Bhatia, C.S., Liang, G., Yang, H. (2010-12-20). Tunneling characteristics of graphene. Applied Physics Letters 97 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3527979
Abstract: Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E -field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of nonuniform disordered graphene is confirmed. A memory switching effect of 100 000% ON/OFF ratio is demonstrated in the tunneling regime, which can be employed in various applications. © 2010 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57725
ISSN: 00036951
DOI: 10.1063/1.3527979
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